selected scholarly activity
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books
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chapters
- Silicon Waveguides for Integrated Optics. 231-270. 2018
- Guided Light in Silicon-Based Materials. 55-96. 2013
- Multichannel Silicon Photonic Devices. 139-196. 2013
- Chapter 5 Low-Dimensional Silicon Structures for Use in Photonic Circuits. Progress in Optics. 251-315. 2013
- Low-Dimensional Silicon Structures for Use in Photonic Circuits. Progress in Optics. 251-315. 2013
- Silicon Photonics—Recent Advances in Device Development. 633-656. 2008
- Optical Detection Technologies for Silicon Photonics. 191-227. 2008
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conferences
- Prospects and design considerations for hybrid glass-silicon waveguides. Silicon Photonics XIX. 32. 2024
- Optimized Mach Zehnder Optical Switch Leveraging Thermal Crosstalk and Differential Control. 2024 Photonics North, PN 2024. 1-2. 2024
- Excess noise characterization of all-silicon avalanche photodetectors for telecommunication bandwidths. 2023 Photonics North (PN). 1-1. 2023
- High Responsivity Si/Ge Phototransistor on Silicon Photonics Platform for Small Signal Application. 2023 Photonics North (PN). 1-1. 2023
- Inverse design of SOI-based angled multimode interferometer wavelength division (de)multiplexers. 2023 Photonics North (PN). 1-1. 2023
- Post-fabrication resonance trimming technique compatible with state-of-the-art foundry technology. 2023 Photonics North (PN). 1-1. 2023
- Silicon nitride subwavelength grating metamaterial waveguides functionalized with atomic layer deposited Al2O3 cladding. 2023 Photonics North (PN). 1-1. 2023
- Monolithic silicon avalanche photodetector utilizing surface state defects operating at 1550 nm. Proceedings of SPIE - The International Society for Optical Engineering. 1242609-1242609-5. 2023
- All-Silicon Low Noise Photonic Frontend For LIDAR Applications. 2022 IEEE Photonics Conference (IPC). 1-2. 2022
- Power handling capability of all-silicon avalanche photodetector operating at 1550 nm. 2022 IEEE Photonics Conference (IPC). 1-2. 2022
- Defining the performance of SiOx ReRAM by engineering oxide microstructure. 2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST). 2022
- Low-Threshold Pulley-Coupled Thulium-Silicon Microdisk Lasers. 2022 Photonics North (PN). 2022
- Photonic Image Rejection Filter for Optical Beamforming Network. 2022 Photonics North (PN). 2022
- Low-Threshold Thulium-Silicon Microdisk Lasers. Optics InfoBase Conference Papers. sf2g.5. 2022
- Low-Threshold Thulium-Silicon Microdisk Lasers. 2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings. 2022
- Silicon Nitride Ring Resonators Based on Subwavelength Grating Metamaterials. Optics InfoBase Conference Papers. sth2h.3. 2022
- Silicon Nitride Ring Resonators Based on Subwavelength Grating Metamaterials. 2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings. 2022
- High-Q-factor tellurium oxide clad silicon microring resonators. IEEE International Conference on Group IV Photonics GFP. 2021
- High Gain Thulium-Doped Tellurium Oxide Waveguide Amplifier for Optical Communication in the $2-\mu \mathrm{m}$ Window. 2021 Photonics North (PN). 2021
- Optimized Design of Tellurium Oxide Coated Subwavelength Grating Metamaterial Waveguides. 2021 Photonics North (PN). 2021
- Progress on a hybrid tellurite glass and silicon nitride waveguide platform for passive, active, and nonlinear photonic integrated circuits. Integrated Optics: Devices, Materials, and Technologies XXV. 31. 2021
- A Thulium-Silicon Hybrid Microdisk Laser. Optics InfoBase Conference Papers. jth3a.2. 2021
- Thulium-Doped Tellurium Oxide Laser for Optical Communication at 2-µm Window. Conference on Lasers and Electro-Optics. 2021
- Thulium-doped tellurium oxide laser for optical communication at 2-µm window. Optics InfoBase Conference Papers. 2021
- Four Wave Mixing in Tellurium-Oxide-Coated Silicon Nitride Ring Resonator. 2020 PHOTONICS NORTH (PN). 2020
- Subwavelength Grating Metamaterial Waveguides Functionalized with Tellurium Oxide Cladding. 2020 PHOTONICS NORTH (PN). 2020
- Silicon Optical Modulators for Data Transmission in Different Wavelength Bands. International Conference on Transparent Optical Networks. 1-4. 2019
- Low-Loss TeO2 Waveguides Integrated on a Si3N4 Platform for Active and Nonlinear Optical Devices. Optics InfoBase Conference Papers. STh3N.6-STh3N.6. 2019
- Low-Loss TeO2 Waveguides Integrated on a Si3N4 Platform for Active and Nonlinear Optical Devices. Conference on Lasers and Electro-Optics (2019), paper STh3N.6. STh3N.6-STh3N.6. 2019
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Low-Loss TeO
2 Waveguides Integrated on a Si3 N4 Platform for Active and Nonlinear Optical Devices. 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings. 2019 - Silicon 'photonic molecules' for sensing applications (Conference Presentation). Silicon Photonics XIV. 60. 2019
- Coherent-Perfect-Absorption-based DPSK Demodulator for Silicon Photonics. 2018 IEEE Photonics Conference (IPC). 2018
- On-Chip 2 μm Wavelength Silicon-on-Insulator Optical Interconnect. IEEE International Conference on Group IV Photonics GFP. 141-142. 2018
- Optimal operation conditions for a push-pull dual-ring silicon modulator from a viewpoint of dispersion engineering and linearity. Proceedings of SPIE - The International Society for Optical Engineering. 2018
- All silicon approach to modulation and detection at λ = 2 µm. Proceedings of SPIE - The International Society for Optical Engineering. 2018
- Application of quantum-dot multi-wavelength lasers and silicon photonic ring resonators to data-center optical interconnects. Proceedings of SPIE - The International Society for Optical Engineering. 2018
- Strain analysis of SiGe microbridges. Proceedings of SPIE - The International Society for Optical Engineering. 2018
- Electrical trimming of the resonance of a silicon micro-ring resonator. IEEE International Conference on Group IV Photonics GFP. 29-30. 2017
- Intrinsic resonance stabilization in depletion-type silicon micro-ring modulators. IEEE International Conference on Group IV Photonics GFP. 35-36. 2017
- Germanium and silicon photonic integrated circuits for the mid-infrared. International Conference on Transparent Optical Networks. 2017
- Mid-infrared SOI micro-ring modulator operating at 2.02 microns. Proceedings of SPIE - The International Society for Optical Engineering. 2017
- Using the intrinsic properties of silicon micro-ring modulators for characterization of RF termination. Proceedings of SPIE - The International Society for Optical Engineering. 2017
- 56 Gb/s Single-Carrier 16-QAM and 32-QAM Subcarrier Modulation Using a Silicon Micro-Ring Resonator. 2017 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC). 2017
- 56 Gb/s Single-Carrier 16-QAM and 32-QAM Subcarrier Modulation Using a Silicon Micro-Ring Resonator. Optics InfoBase Conference Papers. 2017
- Amplified Silicon Photonics. Optics InfoBase Conference Papers. m2d.1. 2017
- Characterization of a Coherent-Perfect-Absorption-based DPSK Demodulator for Si Photonics. Optics InfoBase Conference Papers. fw5a.4. 2017
- Towards 2 - 14μm silicon photonics. Asia Communications and Photonics Conference, ACP. 2016
- Dual-ring-assisted MZI silicon modulator for enhanced intensity modulation. IEEE International Conference on Group IV Photonics GFP. 88-89. 2016
- Low-chirp silicon dual-ring modulator. 2016 Photonics North (PN). 2016
- Materials and device development for silicon photonic detectors. Canadian Conference on Electrical and Computer Engineering. 2016
- High-speed resonant detection via defect states in silicon disk resonators. Proceedings of SPIE - The International Society for Optical Engineering. 2016
- Design considerations for silicon micro-ring modulators. Proceedings of SPIE - The International Society for Optical Engineering. 2016
- Silicon and germanium mid-infrared photonics. Proceedings of SPIE - The International Society for Optical Engineering. 2016
- Mid IR Applications of Si Photonics. 2016 21ST OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) HELD JOINTLY WITH 2016 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING (PS). 2016
- Mid IR Silicon Photonics. Optics InfoBase Conference Papers. ftu5d.1. 2016
- Towards 2 - 14µm Silicon Photonics. Optics InfoBase Conference Papers. 2016
- Group IV mid-IR photonics. 2015 IEEE Summer Topicals Meeting Series (SUM). 55-56. 2015
- Thin film germanium on silicon created via ion implantation and oxide trapping. Journal of Physics: Conference Series. 012001-012001. 2015
- Group IV mid-infrared photonics. Proceedings of SPIE - The International Society for Optical Engineering. 2015
- Coherent Perfect Absorption in a Silicon Photonic Ring Resonator. Frontiers in Optics 2015. 2015
- Coherent perfect absorption in a silicon photonic ring resonator. Proceedings of Frontiers in Optics 2015, FIO 2015. fw3e.3. 2015
- Group IV Photonics for the Mid-Infrared. Advanced Photonics 2015. 371p. 2015
- Silicon Photonic Circuits utilizing WDM for 100Gbps Applications. Advanced Photonics 2015. 371p. 2015
- High-speed low-voltage BPSK modulation using a silicon micro-ring resonator. IEEE International Conference on Group IV Photonics GFP. 2014
- Silicon photonic crystals: light emission, modulation and detection. Proceedings of SPIE - The International Society for Optical Engineering. 2014
- 10 Gb/s bit error free performance of a monolithic silicon avalanche waveguide-integrated photodetector. Optical Fiber Communication Conference, OFC 2014. 2014
- 10 Gb/s bit error free performance of a monolithic silicon avalanche waveguide-integrated photodetector. Optical Fiber Communication Conference, OFC 2014. 1-3. 2014
- 10 Gb/s bit error free performance of a monolithic silicon avalanche waveguide-integrated photodetector. Optics InfoBase Conference Papers. 2014
- 10 Gb/s bit error free performance of a monolithic silicon avalanche waveguide-integrated photodetector. Optics InfoBase Conference Papers. 2014
- 10 Gb/s bit error free performance of a monolithic silicon avalanche waveguide-integrated photodetector. 2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC). 2014
- 10-Gb/s BPSK link using Silicon Microring Resonators for Modulation and Demodulation. 2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC). 2014
- 10-Gb/s BPSK link using Silicon Microring Resonators for Modulation and Demodulation. Optical Fiber Communication Conference. 2014
- 10-Gb/s BPSK link using silicon microring resonators for modulation and demodulation. Conference on Optical Fiber Communication, Technical Digest Series. 2014
- 10-Gb/s BPSK link using silicon microring resonators for modulation and demodulation. Optics InfoBase Conference Papers. 1-3. 2014
- A Fully-integrated In-band OSNR Monitor using a Wavelength-tunable Silicon Microring Resonator and Photodiode. 2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC). 2014
- A Fully-integrated In-band OSNR Monitor using a Wavelength-tunable Silicon Microring Resonator and Photodiode. Optical Fiber Communication Conference. 2014
- A fully-integrated in-band OSNR Monitor using a wavelength-tunable silicon microring resonator and photodiode. Conference on Optical Fiber Communication, Technical Digest Series. 2014
- A fully-integrated in-band OSNR monitor using a wavelength-tunable silicon microring resonator and photodiode. Optics InfoBase Conference Papers. 1-3. 2014
- Pattern-dependent performance of microring modulators. 2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference, OFC/NFOEC 2013. 2013
- Size limit on the phosphorous doped silicon nanocrystals for dopant activation. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 456-458. 2013
- Microring resonance stabilization using thermal dithering. 2013 Optical Interconnects Conference. 58-+. 2013
- Waveguide integrated silicon avalanche photodetectors. Proceedings of SPIE - The International Society for Optical Engineering. 2013
- A Vertical PN Junction Utilizing the Impurity Photovoltaic Effect for the Enhancement of Ultra-thin Film Silicon Solar Cells. Materials Research Society Symposium - Proceedings. 39-44. 2013
- Integrated Thermal Stabilization of a Microring Modulator. 2013 OPTICAL FIBER COMMUNICATION CONFERENCE AND EXPOSITION AND THE NATIONAL FIBER OPTIC ENGINEERS CONFERENCE (OFC/NFOEC). 2013
- Pattern-Dependent Performance of Microring Modulators. Optical Fiber Communication Conference/National Fiber Optic Engineers Conference 2013. 2013
- Simplified Platform for Microring-Sensing using Wavelength Locking. CLEO: 2013 Postdeadline. ath5a.1. 2013
- Wavelength Locking of Microring Resonators and Modulators using a Dithering Signal. 39th European Conference and Exhibition on Optical Communication (ECOC 2013). 894-896. 2013
- Comb-laser driven WDM for short reach silicon photonic based optical interconnection. IEEE International Conference on Group IV Photonics GFP. 210-212. 2012
- Photonic Crystal Cavity Based WDM Components. IEEE International Conference on Group IV Photonics GFP. 270-272. 2012
- Quantum efficiency measurements of down-shifting using silicon nanocrystals for photovoltaic applications. Conference Record of the IEEE Photovoltaic Specialists Conference. 2012
- Defect enhanced silicon-on-insulator microdisk photodetector. 2012 Optical Interconnects Conference. 76-77. 2012
- Deep-level charge state control: a novel method for optical modulation in silicon waveguides. Proceedings of SPIE - The International Society for Optical Engineering. 2012
- Deep-level mediated silicon micro-ring power monitors. Optics InfoBase Conference Papers. iwe4. 2011
- Deep-levels in silicon waveguides: A route to monolithic integration. IEEE Photonic Society 24th Annual Meeting. 461-+. 2011
- Silicon-on-insulator racetrack resonator tuning via ion implantation. IEEE International Conference on Group IV Photonics GFP. 145-147. 2011
- Defect mediated detection of wavelengths around 1550 nm in a ring resonant structure. Proceedings of SPIE - The International Society for Optical Engineering. 2011
- Formation of light-emitting silicon nanoclusters in SiO2. Journal of Physics: Conference Series. 012022-012022. 2011
- Deep-level Mediated Silicon Micro-ring Power Monitors. Optics InfoBase Conference Papers. 2011
- Probing the formation of silicon nano-crystals (Si-ncs) using variable energy positron annihilation spectroscopy. Journal of Physics: Conference Series. 012031-012031. 2011
- Electrical properties of Si-XII and Si-III formed by nanoindentation. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices. 105-106. 2010
- High sensitivity defect-enhanced silicon ring-resonator photodetectors at telecom wavelengths. Optics InfoBase Conference Papers. iwf6. 2010
- (Invited) Novel Processing for Si-Nanocrystal Based Photonic Materials. ECS Transactions. 3-13. 2010
- Athermal and low loss ridge silicon waveguides. Proceedings of SPIE - The International Society for Optical Engineering. 2010
- Formation of Si-nanocrystals in SiO 2 via ion implantation and rapid thermal processing. Proceedings of SPIE - The International Society for Optical Engineering. 2010
- Optical spectroscopy of Er doped Si-nanocrystals on sapphire substrates fabricated by ion implantation into SiO 2. Proceedings of SPIE - The International Society for Optical Engineering. 2010
- Structural and compositional study of Erbium-doped silicon nanocrystals by HAADF, EELS and HRTEM techniques in an aberration corrected STEM. Journal of Physics: Conference Series. 012043-012043. 2010
- High Sensitivity Defect-enhanced Silicon Ring-resonator Photodetectors at Telecom Wavelengths. Optics InfoBase Conference Papers. 2010
- Structure and Luminescence of Rare Earth-doped Silicon Oxides Studied Through XANES and XEOL. ECS Transactions. 213-222. 2009
- Silicon photonics at the University of Surrey. Proceedings of SPIE - The International Society for Optical Engineering. 2009
- Observation of non‐radiative de‐excitation processes in silicon nanocrystals. Physica Status Solidi (A) Applications and Materials. 969-972. 2009
- Thermal tuning of planar Bragg gratings in silicon‐on‐insulator rib waveguides. Physica Status Solidi C: Current Topics in Solid State Physics. S240-S243. 2009
- Free carrier lifetime modification in silicon. Proceedings of SPIE - The International Society for Optical Engineering. 2009
- Application of defect engineering to silicon Raman lasers and amplifiers. Journal of Materials Science: Materials in Electronics. 48-53. 2009
- Study of the monolithic integration of sub-bandgap detection, signal amplification and optical attenuation on a silicon photonic chip. Journal of Materials Science: Materials in Electronics. 456-459. 2009
- The Use of Deep-Level Dopants in Silicon-on-Insulator Optical Waveguide Modulators. Optics InfoBase Conference Papers. imc2. 2009
- Modification of silicon waveguide structures using ion implantation induced defects. Applied Surface Science. 75-77. 2008
- Thermal evolution of defects produced by implantation of H, D and He in Silicon. Applied Surface Science. 63-67. 2008
- Combined Super-STEM imaging, EEL and PL spectroscopy of un-doped and Er doped SRSO on Si. 2008 Conference on Optoelectronic and Microelectronic Materials and Devices. 163-+. 2008
- The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides. 2008 Conference on Optoelectronic and Microelectronic Materials and Devices. 152-+. 2008
- Design of integrated LOCOS waveguide photodetector on SOI. Proceedings of SPIE - The International Society for Optical Engineering. 2008
- Evolution of optical modulation using majority carrier plasma dispersion effect in SOI. Proceedings of SPIE - The International Society for Optical Engineering. 2008
- Sub-micron optical waveguides for silicon photonics formed via the local oxidation of silicon (LOCOS). Proceedings of SPIE - The International Society for Optical Engineering. 2008
- Vertically integrated multimode interferometers for 3-D photonic circuits in SOI. Proceedings of SPIE - The International Society for Optical Engineering. OZ898-OZ898. 2008
- Effect of Strain on the Oxidation Rate of Silicon Germanium Alloys. NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS. 580-+. 2008
- Free carrier lifetime modification for silicon waveguide based devices. 2008 5th IEEE International Conference on Group IV Photonics. 122-124. 2008
- Junction Leakage Analysis of Vacancy Engineered Ultra-Shallow p-type Layers. AIP Conference Proceedings. 22-+. 2008
- Modeling Germanium-Silicon Interdiffusion in Silicon Germanium/Silicon Superlattice Structures. NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS. 576-+. 2008
- Modeling Voids in Silicon. NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS. 573-+. 2008
- Monitoring infrared light using a commercial variable optical attenuator subjected to defect engineering. 2008 5th IEEE International Conference on Group IV Photonics. 85-+. 2008
- Size distribution of silicon nanoclusters determined by transmission electron microscopy. 2008 5th IEEE International Conference on Group IV Photonics. 268-+. 2008
- The Effect of Amorphization Conditions on the Measured Activation of Source Drain Extension Implants. AIP Conference Proceedings. 91-94. 2008
- The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient. Journal of Materials Science: Materials in Electronics. 753-757. 2007
- Ion implanted integrated Bragg gratings in SOI waveguides. Proceedings of SPIE - The International Society for Optical Engineering. 2007
- Fine analysis of spontaneous and vaccine-induced immune responses to the broadly-expressed cancer-testis antigen, NY-ESO-1. Cancer Immunology, Immunotherapy. 424-424. 2007
- A CMOS-compatible rib waveguide with local oxidation of silicon isolation. Proceedings of SPIE - The International Society for Optical Engineering. L4770-L4770. 2007
- High performance total internal reflection type optical switches in silicon-on-insulator. Proceedings of SPIE - The International Society for Optical Engineering. 2007
- Coupled luminescence centres in erbium-doped silicon rich silicon oxide thin films. Proceedings of SPIE - The International Society for Optical Engineering. 2006
- Optimized photoluminescence of Si nanocrystals produced by ion implantation. Proceedings of SPIE - The International Society for Optical Engineering. 2006
- Silicon-on-insulator waveguide photodetector with self-ion-implantation-engineered-enhanced infrared response. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 783-786. 2006
- Monolithically integrated photodetectors for optical signal monitoring in silicon waveguides - art. no. 61250J. Proceedings of SPIE - The International Society for Optical Engineering. 2006
- Integrated Silicon Waveguide-based Structures for Terminal Detection of 1550nm. IEEE International Conference on Group IV Photonics GFP. 161-163. 2006
- The Role of Ion Beam Technology in the Development of Integrated Optical Monitors Suitable for Applications in Silicon Photonics. AIP Conference Proceedings. 9-12. 2006
- Vertically-Stacked SOI Waveguides for 3-D Photonic Circuits. IEEE International Conference on Group IV Photonics GFP. 72-+. 2006
- CMOS compatible vertical directional coupler for 3D optical circuits. Proceedings of SPIE - The International Society for Optical Engineering. 59700g-59700g-10. 2005
- Erbium doped silicon rich silicon oxide luminescent thin films deposited by ECR-PECVD. Proceedings of SPIE - The International Society for Optical Engineering. 597013-597013-12. 2005
- Direct high-resolution determination of vacancy-type defect profiles in ion-implanted silicon. Journal of Physics Condensed Matter. S2323-S2330. 2005
- Infra-Red Photo-Detectors Monolithically Integrated with Silicon-Based Photonic Circuits. Materials Research Society Symposium - Proceedings. 65-70. 2005
- Applications of defect engineering to the fabrication of silicon-based photonic devices. Proceedings of SPIE - The International Society for Optical Engineering. 683-690. 2004
- CMOS-compatible polysilicon MSM photodetector for 1550-nm light. Proceedings of SPIE - The International Society for Optical Engineering. 437-440. 2004
- Impact of Buffered Layer Growth Conditions on Grown-In Vacancy Concentrations in Molecular Beam Epitaxy Silicon Germanium. Materials Research Society Symposium - Proceedings. 253-259. 2004
- Impact of buffered layer growth conditions on grown-in vacancy concentrations in molecular beam epitaxy silicon germanium. Materials Research Society Symposium - Proceedings. 395-401. 2004
- Sensitivity of Positron Annihilation Spectroscopy to Energy Contamination in Low Energy Boron Ion Implantation. Materials Science Forum. 123-125. 2004
- The Role of Impurities in the Formation of Voids in Silicon. Materials Science Forum. 180-182. 2004
- Tapered silicon waveguides for low insertion loss highly-efficient high-speed electronic variable optical attenuators. Journal of Lightwave Technology. 249-251. 2003
- Recent progress in the design, simulation, and fabrication of small cross-section silicon-on-insulator VOAs. Proceedings of SPIE - The International Society for Optical Engineering. 146-156. 2003
- Optical Power Monitoring Function Compatible with Single Chip Integration on Silicon-on-Insulator. Optics InfoBase Conference Papers. 705-706. 2003
- Optical power monitoring function compatible with single chip integration on silicon-on-insulator. OFC 2003 Optical Fiber Communications Conference, 2003.. 705-706. 2003
- Silicon Waveguide Integrated Optical Switching with Microsecond Switching Speed. Optics InfoBase Conference Papers. 449-450. 2003
- Silicon waveguide integrated optical switching with microsecond switching speed. OFC 2003 Optical Fiber Communications Conference, 2003.. 449-450. 2003
- Tapered Silicon Waveguides for Low Insertion Loss Highly-Efficient High-Speed Electronic Variable Optical Attenuators. Optics InfoBase Conference Papers. 6-8. 2003
- Construction and performance of a bench-top mapping positron alpha tool. Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on. 342-345. 2002
- Single-Chip Variable Optical Attenuator and Multiplexer Subsystem Integration. Optics InfoBase Conference Papers. 72-73. 2002
- Single-chip variable optical attenuator and multiplexer subsystem integration. Optical Fiber Communication Conference and Exhibit. 72-73. 2002
- Solid state absorption attenuator in silicon-on-insulator with MHz bandwidth. Optics InfoBase Conference Papers. ifa5. 2002
- 1.5 μm electroluminescence from organic light emitting diodes integrated on silicon substrates. Optical Materials. 161-163. 2001
- Characterisation of a coplanar CVD diamond radiation detector. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 52-57. 2001
- A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 300-304. 2001
- Hybrid silicon-organic light-emitting diodes for 1.5-μm optoelectronics. Proceedings of SPIE - The International Society for Optical Engineering. 265-271. 2001
- Defect Physics Investigations Using Positron and Ion Beams. Materials Science Forum. 56-60. 2001
- Double Implanted Power MESFET Technology in 4H-SiC. Materials Science Forum. 707-710. 2001
- Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor. Materials Science Forum. 567-570. 2001
- Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology. Materials Research Society Symposium - Proceedings. 2001
- Recent progress and current issues in SiC semiconductor devices for power applications. IET Circuits, Devices and Systems. 101-101. 2001
- Slow positron beams—a versatile tool for studying ion implantation defect related phenomena. AIP Conference Proceedings. 745-748. 2001
- 1.6 kV 4H-SiC Schottky diodes for IGBT applications. IEE Conference Publication. 241-245. 2000
- A new tool for nondestructive monitoring of ion implantation. 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432). 654-657. 2000
- A new tool for nondestructive monitoring of ion implantation. 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432). 654-657. 2000
- Characterisation of 4H-SiC Schottky diodes for IGBT applications. Conference Record - IAS Annual Meeting (IEEE Industry Applications Society). 2941-2947. 2000
- Applying slow positrons to the study of ion implantation induced defects in GaAs. Materials Science & Engineering B: Solid-State Materials for Advanced Technology. 146-150. 1999
- B activation and F redistribution in low energy BF2+ implanted silicon. 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144). 921-924. 1999
- Dose rate dependence of residual defects in device grade Si/SiGe heterostructures formed by ion beam synthesis. 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144). 692-695. 1999
- Electrical behaviour associated with defect tails in germanium implanted silicon. 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144). 506-509. 1999
- Evaluation of 4H-SiC varactor diodes for microwave applications. 1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401). 301-306. 1999
- Uniformity and dosimetry study of the 30 kV Danfysik decel lens system. 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144). 377-380. 1999
- Quantum-confined Stark effect tuned MQW laser using post-growth band-gap engineering. Institute of Physics Conference Series. 49-53. 1999
- The Effect of Annealing on Argon Implanted Edge Terminations for 4H-SiC Schottky Diodes. Materials Research Society Symposium - Proceedings. 129-134. 1999
- Band-gap engineered, QCSE tuned laser with uniform frequency modulation response. Conference Digest - IEEE International Semiconductor Laser Conference. 93-94. 1998
- Two-section integrated quantum-confined Stark effect tuned laser with uniform frequency modulation response from 30 kHz to 6 GHz. Proceedings of the International Topical Meeting on Microwave Photonics, MWP, Technical Digest. 165-168. 1998
- A QCSE tuned laser with uniform frequency modulation response for use in microwave photonics. Conference Proceedings of the International Symposium on Signals, Systems and Electronics. 388-391. 1998
- Defect Tails in GE Implanted Si Probed by Slow Positrons and Ion Channeling. Materials Research Society Symposium - Proceedings. 79-84. 1998
- Positron studies of plasma-treated silicon wafers. Applied Surface Science. 228-230. 1997
- <title>Modification of the properties of silica glasses by ion implantation</title>. Proceedings of SPIE - The International Society for Optical Engineering. 122-131. 1997
- Anomalous Diffusion of Ultra low Energy Boron Implants in Silicon. Materials Research Society Symposium - Proceedings. 59-63. 1997
- Carrier removal in n-type GaAs layers by oxygen implantation analysed by positron annihilation spectroscopy. IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305). 243-248. 1997
- Defect Profiling of Oxygen-Related Defects Using a Slow Positron Beam. EARLY STAGES OF OXYGEN PRECIPITATION IN SILICON. 411-418. 1996
- Positron studies of defects in ion implanted SiC. Institute of Physics Conference Series. 457-460. 1996
- A Study of Epithermal Positron Emission from Metallic Surfaces. Materials Science Forum. 161-164. 1995
- An Electrostatic Beam System for Positron-Annihilation-Induced Auger Electron Spectroscopy. Materials Science Forum. 189-192. 1995
- Low and Intermediate Energy Positron Backscattering. Materials Science Forum. 177-180. 1995
- Positron Implantation Studies of YBa<sub>2</sub>Cu<sub>3</sub>0<sub>7-x</sub>. Materials Science Forum. 133-136. 1995
- Work function and epithermal positron emission from copper. Applied Surface Science. 54-58. 1995
- WORK-FUNCTION AND EPITHERMAL POSITRON EMISSION FROM SURFACES. AIP Conference Proceedings. 218-222. 1994
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journal articles
- Reconfigurable integrated photonic filters for optical signal processing using a silicon photonic platform. Optics Letters. 49:1345-1345. 2024
- Modification of the Electrical Properties of a Silicon Waveguide Avalanche Photodetector Operating at 1550 nm via Defect Engineering. Journal of Lightwave Technology. 42:704-712. 2024
- Si/Ge phototransistor with responsivity >1000A/W on a silicon photonics platform. Optics Express. 32:2271-2271. 2024
- A moderate confinement O-, S-, C-, and L-band silicon nitride platform enabled by a rapid prototyping integrated photonics foundry process. IEEE Photonics Journal. 16:1-15. 2024
-
Ultra-Thin Strain-Relieving Si
1−x Gex Layers Enabling III-V Epitaxy on Si. Advanced Materials Interfaces. 2024 - Catecholate Dye-Assisted Decoration of Ag on TiO2 Nanoparticles for Detection of Cancer-Related MicroRNA Biomarkers on a Multiplexed Photoelectrochemical Platform. ACS Applied Nano Materials. 6:20375-20388. 2023
- On-chip hybrid erbium-doped tellurium oxide–silicon nitride distributed Bragg reflector lasers. Applied Physics B: Lasers and Optics. 129. 2023
- Silicon-thulium hybrid microdisk lasers with low threshold and wide emission wavelength range. Optics Express. 31:20244-20244. 2023
- Hybrid silicon-tellurium-dioxide DBR resonators coated in PMMA for biological sensing. Biomedical Optics Express. 14:1545-1545. 2023
- Subwavelength Grating Metamaterial Waveguides and Ring Resonators on a Silicon Nitride Platform. Laser and Photonics Reviews. 17. 2023
- Gain-enabled optical delay readout unit using CMOS-compatible avalanche photodetectors. Photonics Research. 10:2422-2422. 2022
- Application of the TDFA window in true optical time delay systems. Optics Express. 30:30164-30164. 2022
- Engineering Silicon Oxide by Argon Ion Implantation for High Performance Resistance Switching. Frontiers in Materials. 9. 2022
- High-Q TeO2–Si Hybrid Microring Resonators. Applied Sciences (Switzerland). 12:1363-1363. 2022
- Lasing in a Hybrid Rare‐Earth Silicon Microdisk. Laser and Photonics Reviews. 16. 2022
- Lasing in a Hybrid Rare‐Earth Silicon Microdisk (Laser Photonics Rev. 16(1)/2022). Laser and Photonics Reviews. 16. 2022
- Recent progress on rare earth amplifiers and lasers directly on silicon. EPJ Web of Conferences. 267:02041-02041. 2022
- Thulium-doped tellurium oxide microring lasers integrated on a low-loss silicon nitride platform. Optical Materials Express. 11:3656-3656. 2021
- Post-fabrication resonance trimming of Si3N4 photonic circuits via localized thermal annealing of a sputter-deposited SiO2 cladding. Optical Materials Express. 11:2401-2401. 2021
- Thulium-doped tellurium oxide waveguide amplifier with 7.6 dB net gain on a silicon nitride chip: publisher’s note. Optics Letters. 46:1928-1928. 2021
- Four-wave mixing in high-Q tellurium-oxide-coated silicon nitride microring resonators. OSA Continuum. 3:3497-3497. 2020
- A silicon-on-insulator single-arm Mach-Zehnder interferometer (SAMZI) modulator. Journal of Optics (India). 22:105801-105801. 2020
- Graphene oxide integrated silicon photonics for detection of vapour phase volatile organic compounds. Scientific Reports. 10:9592. 2020
- Subwavelength grating metamaterial waveguides functionalized with tellurium oxide cladding. Optics Express. 28:18538-18538. 2020
- High-speed performance of a TDFA-band micro-ring resonator modulator and detector. Optics Express. 28:16845-16845. 2020
- Extended Wavelength Responsivity of a Germanium Photodetector Integrated With a Silicon Waveguide Exploiting the Indirect Transition. IEEE Journal of Selected Topics in Quantum Electronics. 26:1-7. 2020
- Thulium-doped tellurium oxide waveguide amplifier with 76 dB net gain on a silicon nitride chip. Optics Letters. 44:5788-5788. 2019
- Silicon Photonic Circuit Design Using Rapid Prototyping Foundry Process Design Kits. IEEE Journal of Selected Topics in Quantum Electronics. 25:1-26. 2019
- Post-Fabrication Trimming of Silicon Ring Resonators via Integrated Annealing. IEEE Photonics Technology Letters. 31:1373-1376. 2019
- Low-loss TeO2-coated Si3N4waveguides for application in photonic integrated circuits. Optics Express. 27:12529-12529. 2019
- Experimental quantification of the free-carrier effect in silicon waveguides at extended wavelengths. Optics Express. 27:166-166. 2019
- High-speed silicon modulators for the 2 μm wavelength band. Optica. 5:1055-1055. 2018
- DSP-Enabled 104-Gb/s 16-QAM Nyquist Subcarrier Modulation Using a Silicon Micro-Ring Resonator. IEEE Photonics Technology Letters. 30:1571-1574. 2018
- Differential phase-shift-keying demodulation by coherent perfect absorption in silicon photonics. Optics Letters. 43:4061-4061. 2018
- Resonance control of a silicon micro-ring resonator modulator under high-speed operation using the intrinsic defect-mediated photocurrent. Optics Express. 25:24827-24827. 2017
- SiGe-on-insulator fabricated via germanium condensation following high-fluence Ge+ ion implantation. Journal of Applied Physics. 122. 2017
- Mechanisms for optical loss in SOI waveguides for mid-infrared wavelengths around 2μm. Journal of Optics (India). 19:025801-025801. 2017
- Indium as a p-type dopant of thin film silicon solar cells. Thin Solid Films. 615:358-365. 2016
- Silicon Microring Modulator for Dispersion Uncompensated Transmission Applications. Journal of Lightwave Technology. 34:3675-3681. 2016
- Experimental demonstration of coherent perfect absorption in a silicon photonic racetrack resonator. Optics Letters. 41:2537-2537. 2016
- Role of a Si0.95Ge0.05 epilayer cap on boron diffusion in silicon under inert and dry oxidizing ambient annealing. Materials Science in Semiconductor Processing. 48:60-64. 2016
- Enhancement of emission efficiency of P-doped Si-nc using step excitation: Time sharing between photon emission and electric conduction. JSAP Annual Meetings Extended Abstracts. 2015.2:2896-2896. 2015
- High-speed detection at two micrometres with monolithic silicon photodiodes. Nature Photonics. 9:393-396. 2015
- Light-Emitting Diodes Fabricated From Carbon Ions Implanted Into p-Type Silicon. IEEE Transactions on Electron Devices. 62:914-918. 2015
- Silicon-on-insulator sensors using integrated resonance-enhanced defect-mediated photodetectors. Optics Express. 22:28517-28517. 2014
- A 10-Gb/s Silicon Microring Resonator-Based BPSK Link. IEEE Photonics Technology Letters. 26:1805-1808. 2014
- Complementarity of IR-excited Auger electron emission to thermal excited emission in Si-nc:P. JSAP Annual Meetings Extended Abstracts. 2014.2:2980-2980. 2014
- Luminescence quenching of conductive Si nanocrystals via “Linkage emission”: Hopping-like propagation of infrared-excited Auger electrons. Journal of Applied Physics. 116. 2014
- Monolithic silicon waveguide photodiode utilizing surface-state absorption and operating at 10 Gb/s. Optics Express. 22:10710-10710. 2014
- Optical detection and modulation at 2µm-25µm in silicon. Optics Express. 22:10825-10825. 2014
- Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon. Journal of Applied Physics. 115. 2014
- IR excited Auger electron emission from P-doped Si nano-crystals and its effects to luminescence properties. JSAP Annual Meetings Extended Abstracts. 2014.1:3100-3100. 2014
- Electrical observation of non-radiative recombination in Er doped Si nano-crystals during thermal quenching of intra-4f luminescence. Japanese Journal of Applied Physics. 53:031302-031302. 2014
- Wavelength Locking and Thermally Stabilizing Microring Resonators Using Dithering Signals. Journal of Lightwave Technology. 32:505-512. 2014
- Direct observation of indium precipitates in silicon following high dose ion implantation. Semiconductor Science and Technology. 28:125012-125012. 2013
- Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm. IEEE Transactions on Electron Devices. 60:3807-3813. 2013
- Demonstration of a wavelength monitor comprised of racetrack-ring resonators with defect mediated photodiodes operating in the C-band. Optics Express. 21:23450-23450. 2013
- 10 Gbps silicon waveguide-integrated infrared avalanche photodiode. Optics Express. 21:19530-19530. 2013
- Integrated thermal stabilization of a microring modulator. Optics Express. 21:14342-14342. 2013
- Dielectric waveguide vertically coupled to all-silicon photodiodes operating at telecommunication wavelengths. Applied Physics Letters. 102. 2013
- Sub-ångstrom Experimental Validation of Molecular Dynamics for Predictive Modeling of Extended Defect Structures in Si. Physical Review Letters. 110:166102. 2013
- Direct Observation of Electron Capture and Reemission by the Divacancy via Charge Transient Positron Spectroscopy. Physical Review Letters. 110:136401. 2013
- (Invited) Doping Silicon Dielectrics with Silicon, Cerium and Oxygen Via Ion Implantation. ECS Meeting Abstracts. MA2013-01:793-793. 2013
- Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation. Journal of Applied Physics. 113. 2013
- Atomic-level 2-dimensional chemical mapping and imaging of individual dopants in a phosphor crystal. Physical Chemistry, Chemical Physics - PCCP. 15:11420-11420. 2013
- Investigation of the thermal charge “trapping-detrapping” in silicon nanocrystals: Correlation of the optical properties with complex impedance spectra. Applied Physics Letters. 101. 2012
- Deep-levels in silicon waveguides: a route to high yield fabrication. Optical and Quantum Electronics. 44:575-580. 2012
- A mathematical model for void evolution in silicon by helium implantation and subsequent annealing process. Journal of Applied Physics. 112. 2012
- Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si1−xGex epilayer cap. Journal of Applied Physics. 112. 2012
- Photodetector for 1550 nm formed in silicon-on-insulator slab waveguide. Electronics Letters. 48:1148-1150. 2012
- The evolution of silicon photonics as an enabling technology for optical interconnection. Laser and Photonics Reviews. 6:504-525. 2012
- Investigation of energy transfer in Er doped nano-crystalline Si with charge propagation analyses. 希土類 = Rare earths. 134-135. 2012
- Vacancy-type defects created by single-shot and chain ion implantation of silicon. New Journal of Physics. 14:025007-025007. 2012
- Monitoring and Tuning Micro-Ring Properties Using Defect-Enhanced Silicon Photodiodes at 1550 nm. IEEE Photonics Technology Letters. 24:261-263. 2012
- Three-Dimensional Atomic Structure of Metastable Nanoclusters in Doped Semiconductors. Physical Review Letters. 107:186104. 2011
- Impurity-free seeded crystallization of amorphous silicon by nanoindentation. Journal of Applied Physics. 110. 2011
- Charge state switching of deep levels for low-power optical modulation in silicon waveguides. Optics Letters. 36:3717-3717. 2011
- Optical attenuation in ion-implanted silicon waveguide racetrack resonators. Optics Express. 19:14913-14913. 2011
- Probing energy transfer in an ensemble of silicon nanocrystals. Journal of Applied Physics. 110. 2011
- High Resolution Characterization on Point Defects in (Pr,Al) Implanted SrTiO3. Microscopy and Microanalysis. 17:1632-1633. 2011
- The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy. Journal of Applied Physics. 110. 2011
- Defect-mediated resonance shift of silicon-on-insulator racetrack resonators. Optics Express. 19:11969-11969. 2011
- Probing the phonon confinement in ultrasmall silicon nanocrystals reveals a size-dependent surface energy. Journal of Applied Physics. 109:083534-083534. 2011
- Defect-enhanced photo-detection at 1550 nm in a silicon waveguide formed via LOCOS. Semiconductor Science and Technology. 26:045009-045009. 2011
- (Invited) Novel Implantation Processes for Optimising Rare Earth Luminescence from Oxide Films Containing Nanocrystals. ECS Meeting Abstracts. MA2011-01:1249-1249. 2011
- Experimental evidence for semiconducting behavior of Si-XII. Physical review B (PRB). 83. 2011
- Vertically-integrated multimode interferometer coupler for 3D photonic circuits in SOI. Optics Express. 19:2916-2916. 2011
- Analysis of resonance enhancement in defect-mediated silicon micro-ring photodiodes operating at 1550 nm. Journal of Optics (India). 13:125503-125503. 2011
- Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth. Journal of Nanophotonics. 5:059507-059507. 2011
- Defect-Enhanced Silicon-on-Insulator Waveguide Resonant Photodetector With High Sensitivity at 1.55 $\mu$m. IEEE Photonics Technology Letters. 22:1530-1532. 2010
- Total Internal Reflection Optical Switch in SOI With Defect Engineered Barrier Region. Journal of Lightwave Technology. 28:2483-2491. 2010
- Silicon photonic resonator-enhanced defect-mediated photodiode for sub-bandgap detection. Optics Express. 18:14671-14671. 2010
- Atom-by-Atom Analysis of Rare-Earth Dopants implanted in Silicon. Microscopy and Microanalysis. 16:90-91. 2010
- Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon. Journal of Applied Physics. 108. 2010
- Silicon photonic dynamic optical channel leveler with external feedback loop. Optics Express. 18:13805-13805. 2010
- Spatially correlated erbium and Si nanocrystals in coimplanted SiO2 after a single high temperature anneal. Journal of Applied Physics. 107. 2010
- Novel Processing for Si-Nanocrystal Based Photonic Materials. ECS Meeting Abstracts. MA2010-01:1079-1079. 2010
- Photoluminescence from Si+ Ion Implanted Silicon Nitride Films Deposited via PECVD. ECS Meeting Abstracts. MA2010-01:1081-1081. 2010
- Modifying functionality of variable optical attenuator to signal monitoring through defect engineering. Electronics Letters. 46:234-234. 2010
- Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates. Journal of Applied Physics. 106. 2009
- Optical modulation in silicon waveguides via charge state control of deep levels. Optics Express. 17:18571-18571. 2009
- Structure and Luminescence of Rare Earth-Doped Silicon Oxides Studied Through XANES and XEOL. ECS Meeting Abstracts. MA2009-02:3228-3228. 2009
- Role of vacancy-type defects in the formation of silicon nanocrystals. Journal of Applied Physics. 105. 2009
- Formation of Si-nanocrystals in SiO2 via Ion Implantation and Rapid Thermal Processing. ECS Meeting Abstracts. MA2009-01:747-747. 2009
- Modeling Defect Enhanced Detection at 1550 nm in Integrated Silicon Waveguide Photodetectors. Journal of Lightwave Technology. 27:930-937. 2009
- Photoluminescence and positron annihilation spectroscopy of MeV Si+ ion-irradiated SiyO1−y:Er (y≈1/3) thin films. Journal of Applied Physics. 105. 2009
- Modeling germanium diffusion in Si1−xGex/Si superlattice structures. Journal of Applied Physics. 105. 2009
- Free carrier lifetime modification for silicon waveguide based devices. Optics Express. 16:19779-19779. 2008
- Using ${\hbox {SiO}}_{2}$ Carrier Confinement in Total Internal Reflection Optical Switches to Restrict Carrier Diffusion in the Guiding Layer. Journal of Lightwave Technology. 26:1288-1294. 2008
- Observation of vacancy defects at silicon grain boundaries formed via suppressed solid phase epitaxy. Journal of Physics D: Applied Physics. 41:055102-055102. 2008
- Optical Filters Utilizing Ion Implanted Bragg Gratings in SOI Waveguides. Advances in Optical Technologies. 2008. 2008
- The effect of the annealing ramp rate on the formation of voids in silicon. Journal of Physics Condensed Matter. 19:466202-466202. 2007
- Considerations for interpretation of luminescence from silicon-on-insulator light emitting structures. Semiconductor Science and Technology. 22:1104-1110. 2007
- Impact of Defect Introduction on Er3+ Luminescence From SiyO1-y:Er (y≈⅓) Thin Films Characterized by Photoluminescence and Positron Annihilation Spectroscopy. ECS Meeting Abstracts. MA2007-02:1179-1179. 2007
- Preface: phys. stat. sol. (c) 4/10. Physica Status Solidi C: Current Topics in Solid State Physics. 4:3409-3409. 2007
- Implantation profile of Na22 continuous energy spectrum positrons in silicon. Journal of Applied Physics. 101. 2007
- CMOS-compatible optical rib waveguides defined by local oxidation of silicon. Electronics Letters. 43:392-392. 2007
- Optically pumped Si nanocrystal emitter integrated with low loss silicon nitride waveguides. Optics Express. 15:14679-14679. 2007
- Design and Simulation of an Integrated Fiber-to-Chip Coupler for Silicon-on-Insulator Waveguides. IEEE Journal of Selected Topics in Quantum Electronics. 12:1363-1370. 2006
- Electrical conduction of silicon oxide containing silicon quantum dots. Journal of Physics Condensed Matter. 18:9943-9950. 2006
- Optical attenuation in defect-engineered silicon rib waveguides. Journal of Applied Physics. 99. 2006
- Light emission from Si nanoclusters formed at low temperatures. Applied Physics Letters. 88. 2006
- Silicon waveguide-integrated optical power monitor with enhanced sensitivity at 1550nm. Applied Physics Letters. 86. 2005
- Formation and oxidation of Si nanoclusters in Er-doped Si-rich SiOx. Journal of Applied Physics. 97. 2005
- Impact of growth conditions on vacancy-type defects in silicon–germanium structures grown by molecular-beam epitaxy. Applied Physics Letters. 86. 2005
- Effect of ion implantation induced defects on optical attenuation in silicon waveguides. Electronics Letters. 39:1648-1648. 2003
- Positron annihilation spectroscopy as a diagnostic tool for process monitoring of buried oxide layer formation in Si. Journal of Applied Physics. 93:698-701. 2003
- Silicon waveguide two-photon absorption detector at 1.5 μm wavelength for autocorrelation measurements. Applied Physics Letters. 81:1323-1325. 2002
- Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon. Applied Physics Letters. 80:947-949. 2002
- At-temperature annealing of near-surface vacancy-type defects observed by positronium formation spectroscopy. Journal of Physics Condensed Matter. 14:681-688. 2002
- Room-temperature evolution of vacancy-type damage created by 2 keV B+ implantation of Si. Journal of Vacuum Science and Technology B. 20:427-430. 2002
- Imaging of charge transport properties in polycrystalline CVD diamond using IBIC and IBIL microscopy. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 181:219-224. 2001
- Indium interdiffusion in annealed and implanted InAs/(AlGa)As self-assembled quantum dots. Journal of Applied Physics. 89:6044-6047. 2001
- The study of lattice damage using slow positrons following low energy B+ implantation of silicon. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 175-177:62-67. 2001
- Development of a novel tool for semiconductor process control. Materials Science & Engineering B: Solid-State Materials for Advanced Technology. 80:60-64. 2001
- Performance of semi-insulating gallium arsenide X-ray pixel detectors with current-integrating readout. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 460:207-212. 2001
- The effect of substrate temperature on the isolation of n-type GaAs layers using MeV boron implantation. Semiconductor Science and Technology. 16:L17-L19. 2001
- Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures. Journal of Applied Physics. 89:76-79. 2001
- Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation. Solid-State Electronics. 44:1879-1885. 2000
- Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm. Applied Physics Letters. 77:2271-2273. 2000
- Imaging of charge transport in polycrystalline diamond using ion-beam-induced charge microscopy. Applied Physics Letters. 77:913-915. 2000
- Low temperature annealing of 4H–SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation. Journal of Applied Physics. 87:3973-3977. 2000
- Comparison of the annealing characteristics of resistivity and vacancy defects for implant isolated n-type GaAs. Journal of Applied Physics. 87:663-667. 2000
- GaAs quantum wire lasers grown on v-grooved substrates isolated by self-aligned ion implantation. IEEE Transactions on Electron Devices. 47:1769-1772. 2000
- Implanted Bipolar Technology in 4H-SiC. Materials Research Society Symposium - Proceedings. 622:T171-T176. 2000
- Optical characteristics of photosensitive Ge-doped SiO2 planar waveguides implanted with protons at 800°C. Electronics Letters. 36:427-427. 2000
- Physical Characterization of Residual Implant Damage in 4H-SiC Double Implanted Bipolar Technology. Materials Research Society Symposium - Proceedings. 640:H5.30.1-H5.30.5. 2000
- Diagnostic measurement of ion implantation dose and uniformity with a laboratory-based positron probe. Journal of Applied Physics. 86:5988-5992. 1999
- Direct extraction and numerical simulation of the base and collector delay times in double heterojunction bipolar transistors. IEEE Transactions on Electron Devices. 46:10811086. 1999
- Depth profiling of defects in nitrogen implanted silicon using a slow positron beam. Applied Surface Science. 149:175-180. 1999
- Enhancement of depth sensitivity in slow positron implantation spectroscopy of Si. Applied Surface Science. 149:82-86. 1999
- Near-surface lateral vacancy migration in O+-implanted SiC studied by positron re-emission microscopy. Applied Surface Science. 149:135-139. 1999
- The equivalence of vacancy-type damage in ion-implanted Si seen by positron annihilation spectroscopy. Applied Physics Letters. 75:466-468. 1999
- Assessment of the normalization procedure used for interlaboratory comparisons of positron beam measurements. Journal of Applied Physics. 86:342-345. 1999
- Direct extraction and numerical simulation of the base and collector delay times in double heterojunction bipolar transistors. IEEE Transactions on Electron Devices. 46:1081-1086. 1999
- High temperature proton implantation induced photosensitivity of Ge-doped SiO2 planar waveguides. Applied Physics Letters. 74:3311-3313. 1999
- Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels. Applied Physics Letters. 74:1848-1850. 1999
- High-depth-resolution Rutherford backscattering data and error analysis of SiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms. Physical review B (PRB). 59:5097-5105. 1999
- Enhanced depth resolution in positron analysis of ion irradiated SiO2 films. Journal of Applied Physics. 85:1765-1770. 1999
- Laterally stacked varactor formed by ion implantation. Electronics Letters. 35:846-846. 1999
- RBS and ERDA study of ion beam synthesised amorphous gallium nitride. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 148:463-467. 1999
- Self ion irradiated Si probed with enhanced depth resolution positron annihilation spectroscopy. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 148:340-344. 1999
- Monolithically integrated quantum-confined stark effect tuned laser with uniform frequency modulation response. IEEE Photonics Technology Letters. 10:1697-1699. 1998
- Positron spectroscopy of vacancy-type defects in Si created by 5 keV implantation. Journal of Physics Condensed Matter. 10:10403-10408. 1998
- A study of the evolution of carrier and vacancy depth profiles with annealing temperature of Si-implanted GaAs. Semiconductor Science and Technology. 13:1266-1271. 1998
- Open-volume defect tails in Ge-implanted Si probed by slow positrons. Applied Physics Letters. 73:1373-1375. 1998
- Impurity gettering to secondary defects created by MeV ion implantation in silicon. Journal of Applied Physics. 84:2459-2465. 1998
- Defect structure of carbon rich a-SiC:H films and the influence of gas and heat treatments. Journal of Applied Physics. 84:786-795. 1998
- Profile broadening of high dose germanium implants into (100) silicon at elevated temperatures due to channeling. Journal of Applied Physics. 83:3565-3573. 1998
- Annealing of defects induced by Ge irradiation of silica probed with variable energy positrons. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 127-128:86-89. 1997
- Intrinsic electric fields in silicon. Applied Surface Science. 116:211-214. 1997
- Positron characterization of defects formed during solid phase epitaxy of cobalt silicide. Semiconductor Science and Technology. 12:173-178. 1997
- Design of silicon hetero-interface photodetectors. Journal of Lightwave Technology. 15:1608-1615. 1997
- Chemical information in positron annihilation spectra. Applied Physics Letters. 69:3333-3335. 1996
- Defect evolution in Co-implanted Si during annealing at 1000 °C studied using variable-energy positrons and Rutherford backscattering. Physical review B (PRB). 54:13955-13961. 1996
- The effect of thermalisation length and work function on epithermal positron emission from solids. Surface Science. 367:238-244. 1996
- Positron studies of defects in ion-implanted SiC. Physical review B (PRB). 54:3084-3092. 1996
- Si ion implantation-induced damage in fused silica probed by variable-energy positrons. Journal of Applied Physics. 79:9022-9028. 1996
- Investigation of magnetron-sputtered titanium nitride films using positron annihilation spectroscopy. Journal of Physics Condensed Matter. 8:2479-2486. 1996
- Energy spectroscopy of positrons reemitted from Ag(100). Physics Letters, Section A: General, Atomic and Solid State Physics. 212:221-226. 1996
- Positron studies of polycrystalline TiC. Journal of Physics Condensed Matter. 7:9091-9099. 1995
- Positron annihilation spectroscopy applied to porous silicon films. Journal of Applied Physics. 78:4411-4415. 1995
- Relative probabilities of work-function and epithermal positron re-emission from silver. Journal of Physics Condensed Matter. 7:6477-6482. 1995
- The observation of structure in the dependence of the 1 keV positron backscattering coefficient on target atomic number. Journal of Physics Condensed Matter. 7:3485-3492. 1995
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Positron implantation studies of YBa
2 Cu3 O7-x . Materials Science Forum. 175-178:133-136. 1995 - Secondary electron emission from Ag(100) stimulated by positron and electron impact. Applied Surface Science. 85:43-48. 1995
- Energy spectroscopy of positrons re-emitted from polycrystalline tungsten. Journal of Physics Condensed Matter. 6:9601-9611. 1994
- Mid-Infrared Silicon Photonics for Communications. IJEEC - INTERNATIONAL JOURNAL OF ELECTRICAL ENGINEERING AND COMPUTING. 3.
- P添加Siナノ結晶の赤外励起オージェ電子放出と発光特性への影響
- Si-nc:Pにおける赤外励起オージェ電子放出と熱励起放出の相補性
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other
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preprints
- Ultra-thin strain-relieving Si$_{1-x}$Ge$_x$ layers enabling III-V epitaxy on Si 2024
- On-chip hybrid erbium-doped tellurium oxide-silicon nitride distributed Bragg reflector lasers 2023
- Subwavelength grating metamaterial waveguides and ring resonators on a silicon nitride platform 2022
- A thulium-silicon hybrid microdisk laser 2021
- Electrical conduction of silicon oxide containing silicon quantum dots 2006