Observation of non‐radiative de‐excitation processes in silicon nanocrystals Conferences

abstract

• AbstractWe describe the impact of non‐radiative de‐excitation mechanisms on the optical emission from silicon nanocrystals formed in SiO2. Auger excitation via free carriers deliberately introduced through phosphorus ion implantation, shows a monotonic increase with increasing phosphorus concentration which can be modelled adequately using a simple statistical approach. We also report a reduction in nanocrystal luminescence intensity with increasing exposure to UV radiation and suggest this phenomenon results from the introduction of non‐radiative defects in the Si/SiO2 network. The effect of UV radiation varies significantly depending on the sample preparation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

authors

• Knights, Andrew
• Milgram, JN
• Wojcik, J
• Mascher, Peter
• Crowe, I
• Sherliker, B
• Halsall, MP
• Gwilliam, RM

status

• published 

publication date

• May 2009

has subject area

• 0204 Condensed Matter Physics (FoR)
• 0912 Materials Engineering (FoR)
• 1007 Nanotechnology (FoR)
• Applied Physics (Science Metrix)

published in

• Physica Status Solidi (A) Applications and Materials  Journal

presented at event

• 3rd International Conference on Optical, Optoelectronic and Photonic Materials and Applications  Conference

keywords

• LIGHT-EMISSION
• Materials Science
• Materials Science, Multidisciplinary
• PHOTOLUMINESCENCE
• Physical Sciences
• Physics
• Physics, Applied
• Physics, Condensed Matter
• SI NANOCRYSTALS
• Science & Technology
• Technology

Digital Object Identifier (DOI)

• 10.1002/pssa.200881306

start page

• 969

end page

• 972

volume

• 206

issue

• 5