Modeling germanium-silicon interdiffusion in silicon germanium/silicon superlattice structures

We present a model for the interdiffusion of silicon (Si) and germanium (Ge) in SiGe/Si superlattice structures. We considered both the vacancy exchange mechanism and the interstitial diffusion to fit the experimental data available in the temperature range 850-1125°C with Ge fraction up to 27% in SiGe. We considered the effect of Ge fraction on different material properties and we explicitly account for the lattice site conservation during the …