Journal article
A study of the evolution of carrier and vacancy depth profiles with annealing temperature of Si-implanted GaAs
Abstract
The activation of Si implanted into GaAs as a function of temperature and depth has been studied together with the distribution of implantation-induced vacancy defects by automated differential Hall measurement and positron annihilation spectroscopy respectively. A strong influence of implantation damage on the activation of the carriers has been observed, suggesting that two independent activation mechanisms are present dependent on the …
Authors
Knights AP; Apiwatwaja R; Gwilliam R; Sealy BJ; Coleman PG
Journal
Semiconductor Science and Technology, Vol. 13, No. 11,
Publisher
IOP Publishing
Publication Date
November 1, 1998
DOI
10.1088/0268-1242/13/11/006
ISSN
0268-1242