authors
- Ortolland, S
- Wright, Nicolas G
- Johnson, C Mark
- Knights, Andrew
- Coleman, Paul G
- Burrows, CP
- Pidduck, AJ
Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor
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Overview
publication date
- January 1, 2001
has subject area
- 0306 Physical Chemistry (incl. Structural) (FoR)
- 0912 Materials Engineering (FoR)
- Materials (Science Metrix)
- Nanoscience & Nanotechnology (Science Metrix)
published in
- Materials Science Forum Journal