Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor Conference Paper uri icon

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authors

  • Ortolland, S
  • Wright, Nicolas G
  • Johnson, C Mark
  • Knights, Andrew
  • Coleman, Paul G
  • Burrows, CP
  • Pidduck, AJ

publication date

  • January 1, 2001