Conference
Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor
Authors
Ortolland S; Wright NG; Johnson CM; Knights AP; Coleman PG; Burrows CP; Pidduck AJ
Volume
353-356
Pagination
pp. 567-570
Publisher
Trans Tech Publications
Publication Date
January 17, 2001
DOI
10.4028/www.scientific.net/msf.353-356.567
Conference proceedings
Materials Science Forum
ISSN
0255-5476