Conference
The Effect of Doping Type and Concentration on Optical Absorption via Implantation Induced Defects in Silicon-on-Insulator Waveguides
Abstract
The influence of the charge state of ion implantation induced defects in SOI waveguides on the absorption of subbandgap wavelengths is described. It is found that waveguides pre-doped with boron absorb with significantly greater efficiency than those pre-doped with phosphorus. Following annealing at 300°C this difference is approximately ${\bf 8dBcm}^{-1}$, while the intrinsic loss of the waveguides is limited to ${\bf 2dBcm}^{-1}$. These …
Authors
Logan DF; Jessop PE; Knights AP; Gwilliam RM; Halsall MP
Pagination
pp. 152-155
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
July 1, 2008
DOI
10.1109/commad.2008.4802114
Name of conference
2008 Conference on Optoelectronic and Microelectronic Materials and Devices
Conference proceedings
2010 Conference on Optoelectronic and Microelectronic Materials and Devices
ISSN
1097-2137