Excess noise characterization of all-silicon avalanche photodetectors for telecommunication bandwidths

High-speed avalanche photodetectors are an important component due to the rapidly-growing demand for data rate. We demonstrate a monolithically integrated all-silicon avalanche photodetector for operation at 1550 nm. The internal gain is shown to be over 20 and the small signal bandwidth is measured to be 10 GHz. We present on a comprehensive study of the excess noise factor of the silicon avalanche photodiode. The excess noise factor is measured to fit a McIntyre model of k=0.10.