Defect evolution in Co-implanted Si during annealing at 1000 °C studied using variable-energy positrons and Rutherford backscattering

Variable-energy positron-annihilation spectroscopy (PAS) and Rutherford backscattering channeling (RBSC) have been used to probe damage induced by the implantation of n-type CzSi with Co+ ions at 375 °C to fluences ranging from 2×1014 to 1×1016 cm-2. For fluences of 2×1014 and 1×1015 cm-2 only one type of defect was detected using the positron technique, distributed evenly to a depth of 1 μm, ∼2.5 times that of the implanted ions. For fluences …