Journal article
Extended Wavelength Responsivity of a Germanium Photodetector Integrated With a Silicon Waveguide Exploiting the Indirect Transition
Abstract
Photo-detection in the wavelength range 1850 to 2000nm using evanescently-coupled germanium detectors grown on silicon waveguides is described. Devices were fabricated at a silicon photonics foundry using a process flow associated with operation in the O, C and L bands, and as such offer a solution for extended wavelength detection which is readily available. Intrinsic sensitivity is via indirect band transitions, which is enhanced by tensile …
Authors
Anthony R; Hagan DE; Genuth-Okon D; Maestro LM; Crowe IF; Halsall MP; Knights AP
Journal
IEEE Journal of Selected Topics in Quantum Electronics, Vol. 26, No. 2, pp. 1–7
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
DOI
10.1109/jstqe.2019.2938057
ISSN
0792-1233