Anomalous Diffusion of Ultra low Energy Boron Implants in Silicon Conferences

abstract

• ABSTRACTUltra low energy boron implants (0.2 to 3 keV) have been carried out on Si (100) at doses between 1×1014cm−2 and 1×1015cm−2 using xRLEAP. The samples were annealed at temperatures between 900°C and 1050°C. The atomic profiles of these samples was measured using SIMS. Monte Carlo and diffusion simulations were performed using the SSupreme code. Comparisons between the simulations and experimental measurements show interesting differences these are discussed.

authors

• Webb, RP
• Foad, MA
• Gwilliam, RM
• Knights, Andrew
• Thomas, G

status

• published 

publication date

• 1997

published in

• Materials Research Society Symposium - Proceedings  Journal

presented at event

• Symposium on Defects and Diffusion in Silicon Processing  Conference

keywords

• Materials Science
• Materials Science, Multidisciplinary
• Science & Technology
• Technology

Digital Object Identifier (DOI)

• 10.1557/proc-469-59

International Standard Book Number (ISBN) 10

• 1-55899-373-8

start page

• 59

end page

• 63

volume

• 469