Anomalous Diffusion of Ultra low Energy Boron Implants in Silicon

Ultra low energy boron implants (0.2 to 3 keV) have been carried out on Si (100) at doses between 1x1014cm−2 and 1x1015cm−2 using xRLEAP. The samples were annealed at temperatures between 900°C and 1050°C. The atomic profiles of these samples was measured using SIMS. Monte Carlo and diffusion simulations were performed using the SSupreme code. Comparisons between the simulations and experimental measurements show interesting differences these are discussed.