Journal article
Free carrier lifetime modification for silicon waveguide based devices.
Abstract
We investigate the effect of silicon ion irradiation on free carrier lifetime in silicon waveguides, and thus its ability to reduce the density of two-photon-absorption (TPA) generated free carriers. Our experimental results show that free carrier lifetime can be reduced significantly by silicon ion implantation. Associated excess optical absorption from the implanted ions can be reduced to an acceptable level if irradiation energy and dose are …
Authors
Wright NM; Thomson DJ; Litvinenko KL; Headley WR; Smith AJ; Knights AP; Deane JHB; Gardes FY; Mashanovich GZ; Gwilliam R
Journal
Optics Express, Vol. 16, No. 24, pp. 19779–19784
Publisher
Optica Publishing Group
Publication Date
November 24, 2008
DOI
10.1364/oe.16.019779
ISSN
1094-4087