Ultra-Thin Strain-Relieving Si1-xGex Layers Enabling III-V Epitaxy on Si
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Overview
publication date
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Research
keywords
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ANTIPHASE BOUNDARY
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Chemistry
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Chemistry, Multidisciplinary
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GAAS
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GE
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GROWTH
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GaAs-on-Si
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INTEGRATION
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LASERS
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MOCVD
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MOVPE
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Materials Science
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Materials Science, Multidisciplinary
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OXIDATION
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Physical Sciences
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SI(100)
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Science & Technology
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Technology
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defect-mediated diffusion
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heteroepitaxy
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solid-phase epitaxy
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Digital Object Identifier (DOI)