Post-Fabrication Trimming of Silicon Ring Resonators via Integrated Annealing

We report post-fabrication trimming of silicon-on-insulator micro-ring resonators via annealing of lattice defects using integrated micro-heaters. Defects are introduced via an inert MeV boron ion implantation at doses ranging from $3\times 10^{10}$ to $3\times 10^{13}$ cm−2. Ion implantation results in a stable red-shift ranging from 20 to 1200 pm, for the stated dose range. Post-implantation annealing produces a subsequent blue-shift ranging …