Conference
A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy
Abstract
Proton irradiation at an energy of 1 MeV has been used to create an approximately even distribution of simple point defects in both Cz and FZ, n-type silicon to a depth of greater than 10μm. The implanted dose ranged from 1×1011 to 1×1016cm−2. The vacancy component of the defect concentration has been quantitatively measured using positron annihilation and deep level transient spectroscopy. Through careful experimental design it has been …
Authors
Lourenço MA; Knights AP; Homewood KP; Gwilliam RM; Simpson PJ; Mascher P
Volume
175
Pagination
pp. 300-304
Publisher
Elsevier
Publication Date
April 2001
DOI
10.1016/s0168-583x(00)00640-6
Conference proceedings
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
ISSN
0168-583X