A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy

Proton irradiation at an energy of 1 MeV has been used to create an approximately even distribution of simple point defects in both Cz and FZ, n-type silicon to a depth of greater than 10μm. The implanted dose ranged from 1×1011 to 1×1016cm−2. The vacancy component of the defect concentration has been quantitatively measured using positron annihilation and deep level transient spectroscopy. Through careful experimental design it has been possible to meaningfully compare the concentrations independently determined using the two approaches. Good agreement is found between the two techniques for the FZ material adding credence to the methods through which defect concentrations are obtained from the primary data. Somewhat less reasonable agreement is found for the Cz material for which one possible explanation is offered.