Characterisation of 4H-SiC Schottky diodes for...

Characterisation of 4H-SiC Schottky diodes for IGBT applications

Abstract

Si fast recovery diodes currently limit the performance of many IGBT powered systems. In this paper SiC Schottky diodes are proposed as an alternative technology. High current SiC devices are achieved by parallel connection of a large number of small elements. The static and dynamic performance of the SiC Schottky diodes is evaluated and comparisons made with Si PIN diodes at currents of up to 20 A and DC link voltages of up to 600 V. The results demonstrate the effectiveness of the SiC devices in reducing the overall system losses and the levels of EMI generated by switching transitions.

Authors

Johnson CM; Rahimo M; Wright NG; Hinchley DA; Horsfall AB; Morrison DJ; Knights A

Volume

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

January 1, 2000

DOI

10.1109/ias.2000.882584

Name of conference

Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129)

Conference proceedings

Conference Record of the 2000 IEEE Industry Applications Conference Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat No00CH37129)

ISSN

0197-2618

Associated Experts

Andrew Knights

Professor, Faculty of Engineering

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