The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient

While the dynamics of thermal oxidation of Si has been adequately described for over three decades, details of SiGe oxidation are not entirely clear. In particular, the injection into the Si substrate of a super-saturation of interstitial defects during the formation of SiO2 may not be replicated in the SiGe system. Here we describe the response of relatively stable open-volume defects in a Si092Ge0.08 substrate to annealing at 900°C for 30 min …