Optical attenuation in defect-engineered silicon rib waveguides

The excess optical attenuation at wavelengths around 1550nm induced by subamorphous dose ion implantation of silicon-on-insulator rib waveguides has been quantified. Optical attenuation is related to the introduction of lattice defects such as the silicon divacancy. After 2.8MeV Si+ implantation at a dose of 2.5×1014cm−2, the attenuation is greater than 1000dBcm−1. Using positron annihilation spectroscopy to determine the vacancy-type defect …