Implantation profile of Na22 continuous energy spectrum positrons in silicon

The implantation profile of positrons emitted from a continuous energy spectrum source of Na22 in close proximity to a silicon target is modeled. The primary motivation is the use of positron lifetime spectroscopy to characterize layers of defects such as those created by ion irradiation, usually deemed accessible only to techniques which utilize slow positrons. The model combines the Makhov profile, used with considerable success to describe the profile of low energy (<30keV) monoenergetic positrons, with the well-established, universal β-decay energy spectrum. The success of this approach is verified by measuring the fractions of positrons absorbed in thinned silicon samples. This verification utilizes lifetime measurements performed on silicon in a bilayer sandwich configuration with copper as a backing. The model accounts for the uncertainty in the positron backscattering at the silicon∕copper interface. An optimal fit of the model to the experimental data requires that the parameter defining the mean depth of the Makhov profile (usually denoted r) is energy dependent. An example of application is provided in the form of a positron lifetime measurement of defects in silicon introduced by 1.5MeV proton irradiation. Excellent agreement is found between the lifetime data and those obtained using a slow positron technique.