Defect Profiling of Oxygen-Related Defects Using a Slow Positron Beam

Variable-energy positron annihilation spectroscopy (PAS) is a relatively new technique for probing subsurface defects, and has provided novel insights into defects associated with silicon-based systems such as SiO2/Si, silicon nitrides, SIMOX and ion-irradiated Si. The technique entails measurement of Doppler broadening of the annihilation radiation from positrons implanted monoenergetically and subsequently thermalised in the sample, which is …