Impact of buffered layer growth conditions on grown-in vacancy concentrations in molecular beam epitaxy silicon Germanium

Silicon-Germanium (SiGe) has become increasingly attractive to semiconductor manufacturers over the last decade for use in high performance devices. In order to produce thin layers of device grade SiGe with low concentrations of point defects and well-controlled doping profiles, advanced growth and deposition techniques such as molecular beam epitaxy (MBE) are used. One of the key issues in modeling dopant diffusion during subsequent processing …