Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels Academic Article uri icon

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authors

  • Grasby, TJ
  • Parry, CP
  • Phillips, PJ
  • McGregor, BM
  • Morris,, RJH
  • Braithwaite, G
  • Whall, TE
  • Parker, EHC
  • Hammond, R
  • Knights, Andrew
  • Coleman, PG

publication date

  • March 29, 1999