Experts has a new look! Let us know what you think of the updates.

Provide feedback
Home
Scholarly Works
Optical attenuation in ion-implanted silicon...
Journal article

Optical attenuation in ion-implanted silicon waveguide racetrack resonators.

Abstract

The optical absorption at wavelengths near 1550 nm has been quantified as a function of annealing temperature in ion-implanted silicon-on-insulator racetrack resonators. The variation of the output characteristics of the bus waveguide versus the concentration of implantation-induced lattice disorder in the ring is used to develop a novel method for the determination of the coupling and round-trip loss of the resonator, independently. This …

Authors

Doylend JK; Jessop PE; Knights AP

Journal

Optics Express, Vol. 19, No. 16, pp. 14913–14918

Publisher

Optica Publishing Group

Publication Date

August 1, 2011

DOI

10.1364/oe.19.014913

ISSN

1094-4087