Conference
Strain analysis of SiGe microbridges
Abstract
We present the analysis of UV (325 nm) Raman scattering spectra from silicon-germanium (SiGe) microbridges where the SiGe has been formed using the so-called "condensation technique". As opposed to the conventional condensation technique in which SiGe is grown epitaxially, we use high-dose ion implantation of Ge ions into SOI as a means to introduce the initial Ge profile. The subsequent oxidation both repairs implantation induced damage, and …
Authors
Anthony R; Gilbank A; Crowe I; Knights A
Volume
10537
Publisher
SPIE, the international society for optics and photonics
DOI
10.1117/12.2288644
Name of conference
Silicon Photonics XIII