Journal article
Modeling germanium diffusion in Si1−xGex/Si superlattice structures
Abstract
We present a model for the interdiffusion of silicon (Si) and germanium (Ge) in silicon germanium/silicon (Si1−xGex/Si) superlattice (SL) structures. Both a vacancy exchange mechanism and an interstitial diffusion mechanism are considered in the proposed model. The effects of Ge on the diffusion properties of the SL are also considered and the conservation of lattice site constraints is accounted for. Output from the model is compared to …
Authors
Hasanuzzaman M; Haddara YM; Knights AP
Journal
Journal of Applied Physics, Vol. 105, No. 4,
Publisher
AIP Publishing
Publication Date
February 15, 2009
DOI
10.1063/1.3078168
ISSN
0021-8979