Near-surface lateral vacancy migration in O+-implanted SiC studied by positron re-emission microscopy

The areal distribution of near-surface defects created by the implantation of O+ ions into 6H–SiC through chemically-deposited masks has been studied by reflection-geometry positron re-emission microscopy (PRM). PRM images were obtained for ion doses of 1×1013 and 1×1014 cm−2. The ratios of re-emitted positron intensities from unmasked and masked regions of the two samples were measured to be 78(3)% and 45(3)%, respectively. These results are …