Monolithic silicon waveguide photodiode utilizing surface-state absorption and operating at 10 Gb/s Academic Article uri icon

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abstract

  • We have fabricated a waveguide integrated monolithic silicon infrared detector. The photodiode consists of a p-i-n junction across a silicon-on-insulator (SOI) rib waveguide. Absorption is due to surface-states at the silicon/air interface of the waveguide. A 2 mm long detector shows a response of 0.045 A/W (calculated as a function of coupled light) and is capable of operation at 10 Gb/s at a reverse bias voltage of 2 V.

publication date

  • May 5, 2014