Journal article
Optical characteristics of photosensitive Ge-dopedSiO 2 planar waveguides implanted with protons at 800°C
Authors
Hughes PJ; Knights AP; Weiss BL; Ojha S
Journal
Electronics Letters, Vol. 36, No. 5, pp. 427–428
Publisher
Institution of Engineering and Technology (IET)
Publication Date
March 2, 2000
DOI
10.1049/el:20000367
ISSN
0013-5194