Conference
The Effect of Annealing on Argon Implanted Edge Terminations for 4H-SiC Schottky Diodes
Abstract
The edge termination of SiC by the implantation of an inert ion species is used widely to increase the breakdown voltage of high power devices. We report results of the edge termination of Schottky barrier diodes using 30keV Ar+ ions with particular emphasis on the role of postimplant, relatively low temperature, annealing. The device leakage current measured at 100V is increased from 2.5nA to 7μA by the implantation of 30keV Ar+ ions at a dose …
Authors
Knights AP; Morrison DJ; Wright NG; Johnson CM; O’Neill AG; Ortolland S; Homewood KP; Lourenço MA; Gwilliam RM; Coleman PG
Volume
572
Publisher
Springer Nature
Publication Date
1999
DOI
10.1557/proc-572-129
Conference proceedings
MRS Advances
Issue
1
ISSN
2731-5894