High-depth-resolution Rutherford backscattering data and error analysis of SiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms

The thickness and composition of SiGe/Si quantum wells has been studied by high-depth-resolution Rutherford backscattering (RBS) analysis. While a depth resolution at the surface of 8 nm is achieved, the degradation of resolution with depth must be taken into account for a correct analysis of the data. Fully automated analysis incorporating the depth resolution as a function of depth was performed using the simulated annealing algorithm. …