Size limit on the phosphorous doped silicon nanocrystals for dopant activation Conferences

authors

• Yang, P
• Gwilliam, RM
• Crowe, IF
• Papachristodoulou, N
• Halsall, MP
• Hylton, NP
• Hulko, O
• Knights, Andrew
• Shah, M
• Kenyon, AJ

status

• published 

publication date

• July 2013

has subject area

• 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics (FoR)
• 0402 Geochemistry (FoR)
• 0915 Interdisciplinary Engineering (FoR)
• Applied Physics (Science Metrix)

published in

• Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  Journal

presented at event

• 18th International Conference on Ion Beam Modifications of Materials (IBMM)  Conference

keywords

• EMISSION
• Instruments & Instrumentation
• Ion implantation
• Nuclear Science & Technology
• PASSIVATION
• Phosphorus
• Physical Sciences
• Physics
• Physics, Atomic, Molecular & Chemical
• Physics, Nuclear
• SIO2
• Science & Technology
• Silicon nanocrystals
• Technology

Digital Object Identifier (DOI)

• 10.1016/j.nimb.2012.12.077

start page

• 456

end page

• 458

volume

• 307