Size limit on the phosphorous doped silicon nanocrystals for dopant activation

We studied the photoluminescence spectra of silicon nanocrystals doped with and without phosphorus as a function of isothermal annealing time. Silicon nanocrystals were prepared by the implantation of 80keV Si+ into a 500nm SiO2 film to an areal density of 8×1016 at/cm2. Half of the samples were co-implanted with P+ at 80keV to 5×1015 at/cm2. The photoluminescence of the annealed samples were photo-excited at wavelength of 405nm. For short …