Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates

The concentration of vacancy-type defects in a silicon-on-insulator substrate consisting of a 110 nm silicon overlayer and a 200 nm buried oxide has been quantified using variable energy positron annihilation spectroscopy following 300 keV Si+ ion implantation to a dose of 1.5×1015 cm−2 and subsequent annealing at temperatures ranging from 300 to 700 °C. The preferential creation of vacancies (relative to interstitials) in the silicon overlayer …