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Materials and Device Development for Silicon...

Materials and Device Development for Silicon Photonic Detectors

Abstract

This submission provides an overview of the device structures currently used in silicon photonic detector circuits. While germanium detectors dominate for applications up to 1610nm, longer wavelengths require GeSn alloys, III-V bonding techniques or defect engineered devices.

Authors

Knights AP

Pagination

pp. 1-4

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

May 1, 2016

DOI

10.1109/ccece.2016.7726632

Name of conference

2016 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE)

Associated Experts

Andrew Knights

Professor, Faculty of Engineering

Labels

Fields of Research (FoR)

40 Engineering 4016 Materials Engineering 51 Physical Sciences

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