Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation

The effects of post-implantation annealing on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned Ar+ ion implantation have been investigated. Results show that the Ar+ edge termination may be modelled as a shunt linear resistive path at low to moderate reverse bias levels and at low forward bias levels. Low temperature (400–700°C) annealing is shown to increase the equivalent resistance of the edge …