authors
- Morrison, DJ
- Wright, NG
- Horsfall, AB
- Johnson, CM
- O’Neill, AG
- Knights, Andrew
- Hilton, KP
- Uren, MJ
Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation
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Overview
status
publication date
- November 2000
has subject area
- 0204 Condensed Matter Physics (FoR)
- 0205 Optical Physics (FoR)
- 0906 Electrical and Electronic Engineering (FoR)
- Applied Physics (Science Metrix)
published in
- Solid-State Electronics Journal