Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation Academic Article uri icon

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authors

  • Morrison, DJ
  • Wright, NG
  • Horsfall, AB
  • Johnson, CM
  • O’Neill, AG
  • Knights, Andrew
  • Hilton, KP
  • Uren, MJ

publication date

  • November 2000