Positron studies of plasma-treated silicon wafers

Abstract

Wafers of silicon treated with rf oxygen and hydrogen plasma have been studied with the Herodotus slow positron beam. Doppler broadening measurements reveal the influence of temperature and time on defect profiles beneath the surfaces.

Authors

van der Werf DP; Nathwani M; Towner A; Taylor JW; Morton R; Knights AP; Rice-Evans PC; Szekeres A

Volume

116

Pagination

pp. 228-230

Publisher

Elsevier

Publication Date

January 1, 1997

DOI

10.1016/s0169-4332(96)01059-8

Conference proceedings

Applied Surface Science

ISSN

0169-4332

Associated Experts

Andrew Knights

Professor, Faculty of Engineering

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Labels

Fields of Research (FoR)

5106 Nuclear and Plasma Physics 51 Physical Sciences

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