Conference
Positron studies of plasma-treated silicon wafers
Abstract
Wafers of silicon treated with rf oxygen and hydrogen plasma have been studied with the Herodotus slow positron beam. Doppler broadening measurements reveal the influence of temperature and time on defect profiles beneath the surfaces.
Authors
van der Werf DP; Nathwani M; Towner A; Taylor JW; Morton R; Knights AP; Rice-Evans PC; Szekeres A
Volume
116
Pagination
pp. 228-230
Publisher
Elsevier
Publication Date
5 1997
DOI
10.1016/s0169-4332(96)01059-8
Conference proceedings
Applied Surface Science
ISSN
0169-4332