Journal article
Light-Emitting Diodes Fabricated From Carbon Ions Implanted Into p-Type Silicon
Abstract
Silicon-based light-emitting diodes (LEDs) are fabricated using p-type silicon implanted with C+ ions and postannealed at 1000 °C in flowing nitrogen. The ion implantation is carried out at ambient temperature (AT) and 400 °C to investigate the influence of high-temperature implantation on the luminescence of LEDs. Transmission electron microscopy shows a near-surface layer of amorphous silicon (a-Si) with nanoscale carbon-rich inclusions in …
Authors
Purdy SK; Knights AP; Bradley MP; Chang GS
Journal
IEEE Transactions on Electron Devices, Vol. 62, No. 3, pp. 914–918
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
March 1, 2015
DOI
10.1109/ted.2015.2395995
ISSN
0018-9383