GaAs quantum wire lasers grown on v-grooved substrates isolated by self-aligned ion implantation

Multiple vertically stacked GaAs/Al/sub x/Ga/sub 1-x/As quantum wires laser diodes have been fabricated via MOVPE on v-grooved GaAs substrates. The devices are electrically isolated by oxygen ion implantation, utilizing the nonplanarity of the device. The process is self-aligning and requires no masking, yielding significant simplification in the device fabrication. Optimum implant conditions are determined. A quantum internal efficiency of 65.8% is measured for the optimum implanted devices, which exhibit a 5.5 mA threshold current.