Journal article
GaAs quantum wire lasers grown on v-grooved substrates isolated by self-aligned ion implantation
Abstract
Multiple vertically stacked GaAs/Al/sub x/Ga/sub 1-x/As quantum wires laser diodes have been fabricated via MOVPE on v-grooved GaAs substrates. The devices are electrically isolated by oxygen ion implantation, utilizing the nonplanarity of the device. The process is self-aligning and requires no masking, yielding significant simplification in the device fabrication. Optimum implant conditions are determined. A quantum internal efficiency of …
Authors
Percival C; Houston PA; Woodhead J; Al-Khafaji M; Hill G; Roberts JS; Knights AP
Journal
IEEE Transactions on Electron Devices, Vol. 47, No. 9, pp. 1769–1772
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
2000
DOI
10.1109/16.861591
ISSN
0018-9383