Optical detection and modulation at 2µm-25µm in silicon
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Recently the 2μm wavelength region has emerged as an exciting prospect for the next generation of telecommunications. In this paper we experimentally characterise silicon based plasma dispersion effect optical modulation and defect based photodetection in the 2-2.5μm wavelength range. It is shown that the effectiveness of the plasma dispersion effect is dramatically increased in this wavelength window as compared to the traditional telecommunications wavelengths of 1.3μm and 1.55μm. Experimental results from the defect based photodetectors show that detection is achieved in the 2-2.5μm wavelength range, however the responsivity is reduced as the wavelength is increased away from 1.55μm.
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