Positron studies of defects in ion-implanted SiC

Radiation damage caused by the implantation of 200 keV Ge+ ions into 6H-SiC has been studied by monoenergetic positron Doppler broadening and lifetime techniques. Specimens exposed to seven ion fluences ranging from 1016 to 1019 m-2, together with unirradiated samples, were studied. The depth of the damaged crystalline layer was found to range from about 300 to 600 nm and, for ion fluences above 3×1017 m-2, an amorphous layer is seen whose …