Conference
Positron studies of defects in ion implanted SiC
Authors
Brauer G; Anwand W; Pacaud Y; Skorupa W; Plazaola F; Coleman PG; Knights AP; Stormer J; Willutzki P
Editors
Nakashima S; Matsunami H; Yoshida S; Harima H
Series
INSTITUTE OF PHYSICS CONFERENCE SERIES
Volume
142
Pagination
pp. 457-460
Publisher
IOP PUBLISHING LTD
Publication Date
January 1, 1996
ISBN-10
0-7503-0335-2
Name of conference
International Conference on Silicon Carbide and Related Materials 1995 (ICSCRM-95)
Conference place
KYOTO, JAPAN
Conference start date
September 18, 1995
Conference end date
September 21, 1995
Conference proceedings
SILICON CARBIDE AND RELATED MATERIALS 1995
ISSN
0951-3248