Low temperature annealing of 4H–SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation Academic Article uri icon

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authors

  • Knights, Andrew
  • Lourenço, MA
  • Homewood, KP
  • Morrison, DJ
  • Wright, NG
  • Ortolland, S
  • Johnson, CM
  • O’Neill, AG
  • Coleman, PG
  • Hilton, KP
  • Uren, MJ

publication date

  • April 15, 2000