Low temperature annealing of 4H–SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation

Edge termination of Schottky barrier diodes has been achieved using 30 keV Ar+ ions implanted at a dose of 1×1015 cm−2. The reverse-bias leakage current is reduced by 2 orders of magnitude following postimplant annealing at a temperature of 600 °C. The thermal evolution of the implantation induced defects was monitored using positron annihilation spectroscopy and deep-level transient spectroscopy. Two distinct defect regions are observed using …