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Uniformity and dosimetry study of the 30 kV...
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Uniformity and dosimetry study of the 30 kV Danfysik decel lens system

Abstract

In this paper we report on the uniformity and the dosimetry achieved using a decel system designed by Danfysik and fitted to their high current DF1090 research implanter housed within the Surrey facility Energy contamination caused by charge exchange within the lens is addressed as is the effect of different accel-decel ratios on the implant uniformity in the energy range 1-10 keV. Uniformity measurements using optical techniques made on as-implanted wafers are compared to resistivity maps obtained following rapid thermal annealing. Ray diagrams from the modeling program Axcel have been used to explain the results obtained.

Authors

Gwilliam R; Nejim A; Knights A; Sealy B

Volume

1

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

January 1, 1998

DOI

10.1109/iit.1999.812132

Name of conference

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)
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