Journal of Applied Physics
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Overview
publication venue for
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Electron magnetic resonance studies of the Pr3Ga5SiO14 and Nd3Ga5SiO14 kagomé systems
2011
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Phase transformations induced by high electronic excitation in ion-irradiated Gd2(ZrxTi1−x)2O7 pyrochlores
2010
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Magnetodielectric anisotropy study of multiferroicity in Y-doped hexagonal HoMnO3
2008
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Probing multiferroicity and spin-spin interactions via angular dependent dielectric measurements on Y-doped HoMnO3 in high magnetic fields
2007
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Domain formation near the reorientation transition in perpendicularly magnetized, ultrathin Fe/Ni bilayer films (invited)
1999
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Structure and perpendicular magnetization of Fe/Ni(111) bilayers on W(110)
1997
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Critical properties of the spin Peierls transition in CuGeO3
1996
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Interface alloying at Fe/Cr interfaces and its role in exchange coupling, angular resolved Auger electron, magneto-optic Kerr effect, and Brillouin light scattering studies (invited)
1996
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Low temperature spin dynamics of geometrically frustrated antiferromagnets Y2Mo2O7 and Y2Mo1.6Ti0.4O7 studied by muon spin relaxation
1996
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Magnetic and crystal phase transitions in KNiCl3
1996
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Magnetic dichroism in angle-resolved UV photoemission from valence bands, using linearly polarized light
1996
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Magnetic ordering in pyrochlore Ho2Mn2O7
1996
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Nonlinear susceptibility measurements at the spin-glass transition of the pyrochlore antiferromagnet Y2Mo2O7
1996
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Spin polarized neutron scattering study of NiCo/Cu multilayers
1996
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The magnetic response at the metal–insulator transition in La1−xSrxTiO3 (abstract)
1996
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λ-MnO2, a new frustrated antiferromagnet with the defect spinel structure (abstract)
1996
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Small angle neutron scattering from the vortex lattice in 2H-NbSe2 (invited) (abstract)
1994
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A neutron scattering study of the quasi-one-dimensional, dilute Ising-like antiferromagnet CsCo0.83Mg0.17Br3
1993
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Critical scattering from erbium
1993
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Electronic transitions of Ho in Pb2Sr2HoCu3O8 observed by inelastic neutron scattering
1993
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Emerging technologies in magnetic storage (invited) (abstract)
1993
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Magnetism in a chromium jarosite Kagomé lattice KCr3 (OH)6 (SO4)2 (abstract)
1993
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Muon spin relaxation study of the (FμF)− ion in magnetic fluorides
1993
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Neutron scattering from the geometrically frustrated pyrochlore antiferromagnet Tb2Mo2O7 (abstract)
1993
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Re-entrant spin-glass behavior in the frustrated pyrochlore Y2Mn2O7 (abstract)
1993
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Small-angle neutron-scattering studies of Ce(Fe1−xAlx)2
1993
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Muon spin relaxation in the heavy fermion system UPt3
1991
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Frustration and absence of long range order on the corner sharing-tetrahedron lattice within mean field theory (abstract)
1991
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Frustration and short range magnetic correlations in the pyrochlore Y2Mn2O7 (abstract)
1991
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Low-temperature specific heat and thermal expansion in the frustrated garnet Gd3Ga5O12
1991
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Magnetic phase transitions in CsCoBr3
1991
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Magnetic phase transitions in UNi2Si2
1991
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ND4FeBr3, a new one-dimensional S=1 antiferromagnet
1991
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Ordering by quantum fluctuations in a strongly frustrated Heisenberg antiferromagnet
1991
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Superconductivity of UPt3 studied by μ+SR and neutron scattering (abstract)
1991
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Crystal structure and short-range and long-range order in CuSb2O6 (abstract)
1990
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Experimental and theoretical evidence for a new universality class in FeF3: A 3D lattice with frustrated Heisenberg spins (abstract)
1990
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Magnetic excitations in CePd2Si2
1990
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Monte Carlo simulations of CsMnBr3
1990
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Short-range ordering in a three-dimensionally frustrated magnet, Tb2Mo2O7, by wide- and small-angle neutron diffraction
1990
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A neutron diffraction study of the spin-glass-like system Y2Mo2O7 (abstract)
1987
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Spatially resolved luminescence properties of etched quantum well microstructures.
136:123102.
2024
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Analytical model of a nanowire-based betavoltaic device.
135.
2024
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Defect-dependent mechanical and electrical properties of laser-processed CuO nanowires.
134.
2023
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Selective breaking and re-joining of CuO nanowires by nanosecond laser irradiation.
133:075105.
2023
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Infrared imaging of samples in ultrahigh pressure diamond anvil cells.
130.
2021
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Porous SiC electroluminescence from p–i–n junction and a lateral carrier diffusion model.
129.
2021
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Fano resonances in nanohole oligomers in a gold film.
129.
2021
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Mechanical stress in InP and GaAs ridges formed by reactive ion etching.
128.
2020
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Deducing transport properties of mobile vacancies from perovskite solar cell characteristics.
128.
2020
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Rashba band splitting in two-dimensional Ruddlesden–Popper halide perovskites.
128.
2020
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Design and optimization of nanowire betavoltaic generators.
127.
2020
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Nanojoining and tailoring of current–voltage characteristics of metal-P type semiconductor nanowire heterojunction by femtosecond laser irradiation.
127.
2020
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Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states.
126.
2019
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Diffusion and recombination of optically-injected carriers in a semiconductor wafer in 3-dimensions.
126.
2019
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Stacking defects in GaP nanowires: Electronic structure and optical properties.
126.
2019
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Investigation of defects influencing performance of type-II InAs/GaInSb superlattice based infrared PIN type photodetectors.
125.
2019
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Simulation and optimization of current generation in gallium phosphide nanowire betavoltaic devices.
125.
2019
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Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well.
125.
2019
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Defect sensitive etching of hexagonal boron nitride single crystals.
122.
2017
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Decoupling recombination mechanisms and trap state localization in direct bandgap semiconductors using photoluminescence decay.
122.
2017
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SiGe-on-insulator fabricated via germanium condensation following high-fluence Ge+ ion implantation.
122.
2017
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Absolute measurement of effective radiative-efficiency in GaAs grown with molecular-beam-epitaxy.
121.
2017
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First phase to form during cobalt germanidation.
121.
2017
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Defect evolution and its impact on the ferromagnetism of Cu-doped ZnO nanocrystals upon thermal treatment: A positron annihilation study.
121.
2017
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Luminescence properties of Ce3+ and Tb3+ co-doped SiOxNy thin films: Prospects for color tunability in silicon-based hosts.
119.
2016
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Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells.
119.
2016
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Effect of hydrogen passivation on the photoluminescence of Tb ions in silicon rich silicon oxide films.
118.
2015
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Oxygen assisted interconnection of silver nanoparticles with femtosecond laser radiation.
118.
2015
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Nanowire dopant measurement using secondary ion mass spectrometry.
118.
2015
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Density of organic thin films in organic photovoltaics.
118.
2015
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Color stable white phosphorescent organic light emitting diodes with red emissive electron transport layer.
117.
2015
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Sensitivity of the threshold voltage of organic thin-film transistors to light and water.
117.
2015
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Intrinsic magnetic properties of L1 FeNi obtained from meteorite NWA 6259.
117.
2015
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Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure.
117.
2015
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Surface effects on the mechanical elongation of AuCu nanowires: De-alloying and the formation of mixed suspended atomic chains.
117.
2015
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Adhesion and separation models for direct hydrophilic bonding.
117.
2015
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Correlation of infrared spectra and phase transitions in annealed proton-exchanged MgO doped LiNbO3.
117.
2015
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Femtosecond laser-induced phase transformations in amorphous Cu77Ni6Sn10P7 alloy.
117.
2015
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Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113, 133708 (2013)].
117:019901.
2015
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Model for temperature-dependent magnetization of nanocrystalline materials.
117.
2015
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Bandgap and optical absorption edge of GaAs1−xBix alloys with 0 < x < 17.8%.
116.
2014
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(Ca,Na)(Zn,Mn)2As2: A new spin and charge doping decoupled diluted ferromagnetic semiconductor.
116.
2014
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Luminescence quenching of conductive Si nanocrystals via “Linkage emission”: Hopping-like propagation of infrared-excited Auger electrons.
116.
2014
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Model of the magnetization of nanocrystalline materials at low temperatures.
116.
2014
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Modelling of InGaP nanowires morphology and composition on molecular beam epitaxy growth conditions.
116.
2014
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Surface passivation of tellurium-doped GaAs nanowires by GaP: Effect on electrical conduction.
115.
2014
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Comprehensive study of the effect of the irradiation temperature on the behavior of cubic zirconia.
115.
2014
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Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters?.
115.
2014
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Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon.
115.
2014
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Nanostructure evolution in joining of Al and Fe nanoparticles with femtosecond laser irradiation.
115.
2014
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In situ controlled modification of the helium density in single helium-filled nanobubbles.
115.
2014
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Precise parameter extraction technique for organic thin-film transistors operating in the linear regime.
115.
2014
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Monitoring the Fermi-level position within the bandgap on a single nanowire: A tool for local investigations of doping.
114.
2013
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Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer.
114.
2013
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Asymptotic and numerical prediction of current-voltage curves for an organic bilayer solar cell under varying illumination and comparison to the Shockley equivalent circuit.
114.
2013
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Electrostatic model of radial pn junction nanowires.
114.
2013
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First-principle prediction of single-carrier avalanche multiplication in chalcopyrite semiconductors.
113.
2013
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Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires.
113.
2013
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Deep level defects in n-type GaAsBi and GaAs grown at low temperatures.
113.
2013
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Investigation of cross-hatch in In0.3Ga0.7As pseudo-substrates.
113.
2013
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Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes.
113.
2013
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Structural investigation of interface and defects in epitaxial Bi3.25La0.75Ti3O12 film on SrRuO3/SrTiO3 (111) and (100).
113.
2013
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Photopolymerizable organically modified holographic glass with enhanced thickness for spectral filters.
113.
2013
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Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation.
113.
2013
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Trapped charge dynamics in InAs nanowires.
113.
2013
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Controlled joining of Ag nanoparticles with femtosecond laser radiation.
112.
2012
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Critical shell thickness for InAs-AlxIn1−xAs(P) core-shell nanowires.
112.
2012
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Optical characteristics of GaAs nanowire solar cells.
112.
2012
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Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy.
112.
2012
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Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy.
112.
2012
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Evidence of Eu2+ 4f electrons in the valence band spectra of EuTiO3 and EuZrO3.
112.
2012
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Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si(001) by transmission electron microscopy.
112.
2012
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A mathematical model for void evolution in silicon by helium implantation and subsequent annealing process.
112.
2012
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Analytical model of surface depletion in GaAs nanowires.
112.
2012
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Interference rings formation inside cellulose from a back-reflected femtosecond laser pulse.
112.
2012
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Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si1−xGex epilayer cap.
112.
2012
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Correlation between quantum conductance and atomic arrangement of atomic-size silver nanowires.
111.
2012
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Electrical transport and optical model of GaAs-AlInP core-shell nanowires.
111.
2012
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Mechanism of adaptability for the nano-structured TiAlCrSiYN-based hard physical vapor deposition coatings under extreme frictional conditions.
111.
2012
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Spectroscopic study of white organic light-emitting devices with various thicknesses of emissive layer.
111.
2012
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The role of vicinal silicon surfaces in the formation of epitaxial twins during the growth of III-V thin films.
110.
2011
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Impurity-free seeded crystallization of amorphous silicon by nanoindentation.
110.
2011
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Electron and hole scattering in short-period InGaAs/InP superlattices.
110.
2011
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Publisher’s Note: “Effect of layer separation, InAs thickness, and rapid thermal annealing on the optical emission from a multi-layer quantum wire structure” [J. Appl. Phys. 109, 124311 (2011)].
110.
2011
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Energy transfer between host and dopant molecules in blue organic light-emitting devices.
110:034501.
2011
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Probing energy transfer in an ensemble of silicon nanocrystals.
110.
2011
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Magnetocaloric effect in Ni-Mn-Ga thin films under concurrent magnetostructural and Curie transitions.
110.
2011
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The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy.
110.
2011
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Theoretical conversion efficiency of a two-junction III-V nanowire on Si solar cell.
110.
2011
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Effect of layer separation, InAs thickness, and rapid thermal annealing on the optical emission from a multi-layer quantum wire structure.
109.
2011
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Lattice thermal conductivity of a silicon nanowire under surface stress.
109.
2011
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Probing the phonon confinement in ultrasmall silicon nanocrystals reveals a size-dependent surface energy.
109:083534-083534.
2011
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Photopolymerizable glasses incorporating high refractive index species and ionic liquid: A comparative study.
109.
2011
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Numerical model of current-voltage characteristics and efficiency of GaAs nanowire solar cells.
109.
2011
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Application of positron annihilation and Raman spectroscopies to the study of perovskite type materials.
108.
2010
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Microstructure and ferroic properties of epitaxial [γ-Fe2O3–BiFeO3]−Bi3.25La0.75Ti3O12 composite bilayers.
108.
2010
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The effects of magnetic nanoparticle properties on magnetic fluid hyperthermia.
108.
2010
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Temperature dependence of hole mobility in GaAs1−xBix alloys.
108.
2010
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InAs quantum wire induced composition modulation in an In0.53Ga0.37Al0.10As barrier layer grown on an InP substrate.
108.
2010
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Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon.
108.
2010
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The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters.
108.
2010
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Exchange bias in a single phase ferrimagnet.
107.
2010
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Photoluminescence model for a hybrid aptamer-GaAs optical biosensor.
107.
2010
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Spatially correlated erbium and Si nanocrystals in coimplanted SiO2 after a single high temperature anneal.
107.
2010
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Numerical investigation of flow-through immunoassay in a microchannel.
107.
2010
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High performance nanocomposite thin film transistors with bilayer carbon nanotube-polythiophene active channel by ink-jet printing.
106.
2009
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Structural and optical analysis of GaAsP/GaP core-shell nanowires.
106.
2009
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Influence of superimposed ultrasound on deformability of Cu.
106.
2009
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Enhanced mass transport in ultrarapidly heated Ni/Si thin-film multilayers.
106.
2009
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Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates.
106.
2009
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Evaluation of the charge density in the contact region of organic thin film transistors.
106.
2009
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Ablation and structural changes induced in InP surfaces by single 10 fs laser pulses in air.
106.
2009
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Multistep damage evolution process in cubic zirconia irradiated with MeV ions.
106.
2009
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Compact modeling of charge carrier mobility in organic thin-film transistors.
106.
2009
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Experimental characterization and theoretical modeling of the strain effect on the evolution and interband transitions of InAs quantum dots grown on InxGa1−xAs (0.0⩽x⩽0.3) metamorphic pseudosubstrates on GaAs wafers.
106.
2009
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Ultrasonic friction power during Al wire wedge-wedge bonding.
106:013503.
2009
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Analytical description of the metal-assisted growth of III–V nanowires: Axial and radial growths.
105.
2009
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Role of vacancy-type defects in the formation of silicon nanocrystals.
105.
2009
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Quantitative compositional analysis and strain study of InAs quantum wires with InGaAlAs barrier layers.
105.
2009
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Model for the injection of charge through the contacts of organic transistors.
105.
2009
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Quantum well intermixing of a quantum well structure grown on an InAsP metamorphic pseudosubstrate on InP.
105.
2009
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Photoluminescence and positron annihilation spectroscopy of MeV Si+ ion-irradiated SiyO1−y:Er (y≈1/3) thin films.
105.
2009
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Modeling germanium diffusion in Si1−xGex/Si superlattice structures.
105.
2009
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Damage induced by electronic excitation in ion-irradiated yttria-stabilized zirconia.
105.
2009
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Effects of superimposed ultrasound on deformation of gold.
105.
2009
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Blend composition study of poly(3,3‴-didodecylquaterthiophene)/[6,6]-phenyl C61 butyric acid methyl ester solution processed organic solar cells.
105.
2009
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Microthermography of diode lasers: The impact of light propagation on image formation.
105:014502.
2009
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Photoluminescence and positron annihilation spectroscopy investigation of (Ge, Er) codoped Si oxides deposited by magnetron sputtering.
105.
2009
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A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration.
104.
2008
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Resonant electron tunneling through defects in GaAs tunnel diodes.
104.
2008
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The response of semiconductor optical amplifiers containing lateral composition modulation in the quantum wells.
104.
2008
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Unsteady nanoscale thermal transport across a solid-fluid interface.
104.
2008
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Direct structural evidence of the change in N-III bonding in (GaIn)(NAs) before and after thermal annealing.
104.
2008
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The consequence of lateral composition modulation on the anisotropic emission for transitions to the heavy hole subbands in InGaAs quantum wells.
104.
2008
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Theoretical modeling of dark current in quantum dot infrared photodetectors using nonequilibrium Green’s functions.
104.
2008
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Contact effects and extraction of intrinsic parameters in poly(3-alkylthiophene) thin film field-effect transistors.
103.
2008
-
Continuous current and surface potential models for undoped and lightly doped double-gate metal-oxide-semiconductor field-effect transistors.
103.
2008
-
Impact of carbon concentration on 1∕f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors.
103.
2008
-
Tilt generation in step-graded InxGa1−xAs metamorphic pseudosubstrate on a singular GaAs substrate using a low-temperature grown InGaP interlayer.
103.
2008
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Nanocrystalline coating design for extreme applications based on the concept of complex adaptive behavior.
103.
2008
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Unified model for the injection and transport of charge in organic diodes.
103.
2008
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High-resolution observations of an amorphous layer and subsurface damage formed by femtosecond laser irradiation of silicon.
103.
2008
-
Modulation of hard x-ray beam profiles by Borrmann pyramid.
103.
2008
-
On the effects of double-step anneal treatments on light emission from Er-doped Si-rich silicon oxide.
103.
2008
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Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells.
102.
2007
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Spectral function and responsivity of resonant tunneling and superlattice quantum dot infrared photodetectors using Green’s function.
102.
2007
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Features of self-organization in ion modified nanocrystalline plasma vapor deposited AlTiN coatings under severe tribological conditions.
102.
2007
-
ZnO field-effect transistors prepared by aqueous solution-growth ZnO crystal thin film.
102.
2007
-
Avalanche multiplication phenomenon in amorphous semiconductors: Amorphous selenium versus hydrogenated amorphous silicon.
102.
2007
-
Influence of the annealing temperature and silicon concentration on the absorption and emission properties of Si nanocrystals.
102.
2007
-
Destruction and enhancement of photonic band gap and coherent localization of optical fields in functional photonic crystals.
101.
2007
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Probing the indium clustering in InGaAs∕GaAs quantum wells by room temperature contactless electroreflectance and photoluminescence spectroscopy.
101.
2007
-
Processing-induced strains at solder interfaces in extended semiconductor structures.
101.
2007
-
The role of proximity caps during the annealing of UV-ozone oxidized GaAs.
101.
2007
-
X-ray photoelectron spectroscopic study of the formation of catalytic gold nanoparticles on ultraviolet-ozone oxidized GaAs(100) substrates.
101.
2007
-
Self-aligned inkjet printing of highly conducting gold electrodes with submicron resolution.
101.
2007
-
Strain relaxation in (100) and (311) GaP∕GaAs thin films.
101.
2007
-
Theory of microplasma fluctuations and noise in silicon diode in avalanche breakdown.
101.
2007
-
Improving the stability of organic light-emitting devices by using a hole-injection-tunable-anode-buffer-layer.
101.
2007
-
Strain relief and dislocation motion in III-nitride films grown on stepped and step-free 4H-SiC mesas.
101.
2007
-
Implantation profile of Na22 continuous energy spectrum positrons in silicon.
101.
2007
-
Degradation mechanisms in organic light-emitting devices: Metal migration model versus unstable tris(8-hydroxyquinoline) aluminum cationic model.
101.
2007
-
Enhanced thermal stability in organic light-emitting diodes through nanocomposite buffer layers at the anode/organic interface.
101.
2007
-
Subsurface modifications in indium phosphide induced by single and multiple femtosecond laser pulses: A study on the formation of periodic ripples.
101.
2007
-
Kinetics of the photostructural changes in a-Se films.
100.
2006
-
Carrier distribution and its dependence on barrier thickness in InGaAsP∕InP asymmetric multiple quantum well lasers.
100.
2006
-
Spectral function of InAs∕InGaAs quantum dots in a well detector using Green’s function.
100.
2006
-
Noise considerations in field-effect biosensors.
100.
2006
-
High resolution x-ray diffraction analysis of InGaAs∕InP superlattices.
100.
2006
-
Comparison of quantum well intermixing in GaAs structures using a low temperature grown epitaxial layer or a SiO2 cap.
100.
2006
-
Photoreflectance investigations of quantum well intermixing processes in compressively strained InGaAsP∕InGaAsP quantum well laser structures emitting at 1.55μm.
100.
2006
-
The influence of lateral composition modulation on the photoluminescence of tensile strained InGaAs quantum wells at room temperature.
99.
2006
-
Structural and magnetic properties of a chemically ordered face-centered-cubic (111) Mn alloy film.
99.
2006
-
Optical attenuation in defect-engineered silicon rib waveguides.
99.
2006
-
Correlation between electroluminescence efficiency and stability in organic light-emitting devices under pulsed driving conditions.
99.
2006
-
X-ray-diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides.
99.
2006
-
A kinetic model for the oxidation of silicon germanium alloys.
98.
2005
-
Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy.
98.
2005
-
Model for the field effect from layers of biological macromolecules on the gates of metal-oxide-semiconductor transistors.
98.
2005
-
Crack healing during molecular-beam-epitaxy growth of GaP∕GaAs thin films.
98.
2005
-
Delayed electroluminescence in small-molecule-based organic light-emitting diodes: Evidence for triplet-triplet annihilation and recombination-center-mediated light-generation mechanism.
98.
2005
-
Suspended glass nanochannels coupled with microstructures for single molecule detection.
97.
2005
-
The origin of preferential twinning in YBa2Cu3O7−δ thin films deposited on the (0 0 1) NdGaO3 substrate.
97.
2005
-
Formation and oxidation of Si nanoclusters in Er-doped Si-rich SiOx.
97.
2005
-
Sputtered Zn1−xGa2O4:Mn thin-film electroluminescent devices prepared using cadmium-assisted processing.
97.
2005
-
Organic light-emitting devices with silicon anodes.
97.
2005
-
Using a quartz crystal microbalance to probe formation of Xe hydrate in thin ice films.
96:2980-2984.
2004
-
Short channel effects in regioregular poly(thiophene) thin film transistors.
96:2063-2070.
2004
-
Al:SiO thin films for organic light-emitting diodes.
96:709-714.
2004
-
An extended multi-component model for the change of threshold current of semiconductor lasers as a function of time under the influence of defect annealing.
95:2264-2271.
2004
-
Effects of having two populations of defects growing in the cavity of a semiconductor laser.
94:2155-2161.
2003
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Investigation of circular Bragg reflection in an azo polymer with photoinduced chirality.
94:2162-2166.
2003
-
Analytical model for saturable aging in semiconductor lasers.
94:1803-1809.
2003
-
Demonstration of high-density three-dimensional storage in fused silica by femtosecond laser pulses.
94:1304-1307.
2003
-
Growth and magnetic properties of epitaxial ultrathin Ni films on Cu(111) using Sb as a surfactant.
93:8740-8742.
2003
-
Magnetic relaxation in exchange-coupled Co/CoO bilayers measured with ac-anisotropic magnetoresistance.
93:8609-8611.
2003
-
Characterization of the electro-optical behavior of Zn2Si0.5Ge0.5O4:Mn thin-film electroluminescent devices.
93:4622-4627.
2003
-
Spatially resolved spectroscopic strain measurements on high-power laser diode bars.
93:1354-1362.
2003
-
Effects of annealing ambient on the formation of compensation defects in InP.
93:930-932.
2003
-
Positron annihilation spectroscopy as a diagnostic tool for process monitoring of buried oxide layer formation in Si.
93:698-701.
2003
-
On the frequency response of a resonant-cavity-enhanced separate absorption, grading, charge, and multiplication avalanche photodiode.
92:7133-7145.
2002
-
Controlled group V intermixing in InGaAsP quantum well structures and its application to the fabrication of two section tunable lasers.
92:4330-4335.
2002
-
Electrical conductivity of Wesgo AL995 alumina under fast electron irradiation in a high voltage electron microscope.
92:1995-1999.
2002
-
Experimental investigation and modeling of diffusion in the InP/(In,Ga)As heterostructures.
91:9613-9621.
2002
-
Low frequency noise of reverse biased rectifier diodes in the avalanche breakdown regime.
91:9232-9240.
2002
-
Aging and memory properties of topologically frustrated magnets.
91:8384-8386.
2002
-
Characterization of the bonding strength and interface current of p-Si/n-InP wafers bonded by surface activated bonding method at room temperature.
91:3062-3066.
2002
-
Electron energy loss spectroscopy of interfacial layer formation in Gd2O3 films deposited directly on Si(001).
91:2921-2928.
2002
-
Indium interdiffusion in annealed and implanted InAs/(AlGa)As self-assembled quantum dots.
89:6044-6047.
2001
-
Simultaneous electroluminescence and photoluminescence aging studies of tris(8-hydroxyquinoline) aluminum-based organic light-emitting devices.
89:4673-4675.
2001
-
Models of the current–voltage dependence of BaTiO3 with positive temperature coefficient of resistivity.
89:3939-3946.
2001
-
Role of specimen thickness on the electrical conductivity of single crystalline alumina under electron irradiation.
89:1612-1618.
2001
-
Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures.
89:76-79.
2001
-
Low-frequency electrical noise of high-speed, high-performance 1.3 μm strained multiquantum well gain-coupled distributed feedback lasers.
88:6746-6751.
2000
-
Diffusion of Ge in Si1-xGex/Si single quantum wells in inert and oxidizing ambients.
88:1366-1372.
2000
-
Low temperature annealing of 4H–SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation.
87:3973-3977.
2000
-
Photorefractive damage of LiNbO3 quasiphase matched wavelength converters.
87:3203-3208.
2000
-
Asymmetry in the dark current low frequency noise characteristics of B–B and B–C quantum well infrared photodetectors from 10 to 80 K.
87:2400-2407.
2000
-
Comparison of the annealing characteristics of resistivity and vacancy defects for implant isolated n-type GaAs.
87:663-667.
2000
-
Series resistance and its effect on the maximum output power of 1.5 μm strained-layer multiple-quantum-well ridge waveguide InGaAsP lasers.
87:1-4.
2000
-
Diagnostic measurement of ion implantation dose and uniformity with a laboratory-based positron probe.
86:5988-5992.
1999
-
Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF3.
86:2499-2504.
1999
-
Assessment of the normalization procedure used for interlaboratory comparisons of positron beam measurements.
86:342-345.
1999
-
Low-frequency noise in a thin active layer α-Si:H thin-film transistors.
85:7952-7957.
1999
-
Domain formation near the reorientation transition in perpendicularly magnetized, ultrathin Fe/Ni bilayer films (invited).
85:5054-5059.
1999
-
Maximum operating power of 1.3 μm strained layer multiple quantum well InGaAsP lasers.
85:2367-2370.
1999
-
Enhanced depth resolution in positron analysis of ion irradiated SiO2 films.
85:1765-1770.
1999
-
On the origin of 1/f noise in polysilicon emitter bipolar transistors.
85:1192-1195.
1999
-
Electrical resistivity of sputtered Cu/Cr multilayered thin films.
85:302-309.
1999
-
Positron annihilation investigation of porous silicon heat treated to 1000 °C.
84:6559-6564.
1998
-
Anisotropic interfacial strain in InP/InGaAs/InP quantum wells.
84:5739-5742.
1998
-
Maximum operating temperature of the 1.3 μm strained layer multiple quantum well InGaAsP lasers.
84:4076-4078.
1998
-
Effect of the silicon/oxide interface on interstitials: Di-interstitial recombination.
84:3555-3560.
1998
-
Impurity gettering to secondary defects created by MeV ion implantation in silicon.
84:2459-2465.
1998
-
Defect structure of carbon rich a-SiC:H films and the influence of gas and heat treatments.
84:786-795.
1998
-
Measurements and comparison of low frequency noise in npn and pnp polysilicon emitter bipolar junction transistors.
84:625-633.
1998
-
Profile broadening of high dose germanium implants into (100) silicon at elevated temperatures due to channeling.
83:3565-3573.
1998
-
Dependence of carrier lifetime and resistivity on annealing in InP grown by He-plasma-assisted molecular beam epitaxy.
83:3423-3425.
1998
-
Constant-resistance deep-level transient spectroscopy in submicron metal-oxide-semiconductor field-effect transistors.
83:820-825.
1998
-
Characterization and modelling of the strain fields associated with InGaAs layers on V-grooved InP substrates.
82:6016-6023.
1997
-
Anisotropic interfacial strain in InP/InGaAs/InP quantum wells studied using degree of polarization of photoluminescence.
81:3616-3620.
1997
-
Structure and perpendicular magnetization of Fe/Ni(111) bilayers on W(110).
81:4702-4704.
1997
-
Three wave mixing using a fiber ring resonator.
81:1055-1062.
1997
-
Band gap modification in Ne+-ion implanted In1−xGaxAs/InP and InAsyP1−y/InP quantum well structures.
81:765-770.
1997
-
Nanoindentation investigation of the Young’s modulus of porous silicon.
80:3772-3776.
1996
-
On the contribution of vacancy complexes to the saturation of the carrier concentration in zinc doped InP.
80:2712-2719.
1996
-
Effect of annealing on the defect structure in a-SiC:H films.
80:2216-2223.
1996
-
Si ion implantation-induced damage in fused silica probed by variable-energy positrons.
79:9022-9028.
1996
-
Quantum-well strain and thickness characterization by degree of polarization.
79:7640-7645.
1996
-
Study of the cracking of highly porous p+ type silicon during drying.
79:7586-7591.
1996
-
Critical properties of the spin Peierls transition in CuGeO3.
79:5081-5083.
1996
-
Interface alloying at Fe/Cr interfaces and its role in exchange coupling, angular resolved Auger electron, magneto-optic Kerr effect, and Brillouin light scattering studies (invited).
79:4518-4523.
1996
-
Low temperature spin dynamics of geometrically frustrated antiferromagnets Y2Mo2O7 and Y2Mo1.6Ti0.4O7 studied by muon spin relaxation.
79:6636-6638.
1996
-
Magnetic and crystal phase transitions in KNiCl3.
79:6614-6616.
1996
-
Magnetic dichroism in angle-resolved UV photoemission from valence bands, using linearly polarized light.
79:6504-6506.
1996
-
Magnetic ordering in pyrochlore Ho2Mn2O7.
79:6173-6175.
1996
-
Nonlinear susceptibility measurements at the spin-glass transition of the pyrochlore antiferromagnet Y2Mo2O7.
79:6170-6172.
1996
-
Spin polarized neutron scattering study of NiCo/Cu multilayers.
79:4769-4771.
1996
-
Electroluminescence of the oxide thin film phosphors Zn2SiO4 and Y2SiO5.
79:3229-3234.
1996
-
Group V incorporation in InGaAsP grown on InP by gas source molecular beam epitaxy.
79:3021-3027.
1996
-
Visible photoluminescence from helium-ion implanted carbon in silicon.
78:6185-6188.
1995
-
Positron annihilation spectroscopy applied to porous silicon films.
78:4411-4415.
1995
-
On the nucleation of an intermediate phase at an interface in the presence of a concentration gradient.
78:1589-1594.
1995
-
Low frequency noise in polysilicon-emitter bipolar junction transistors.
77:6278-6288.
1995
-
Electrical properties of p-type InGaAsP and InGaAs irradiated with He+ and N+.
77:5580-5583.
1995
-
Desorption of ultraviolet-ozone oxides from InP under phosphorus and arsenic overpressures.
77:5167-5172.
1995
-
Correlation between strain fields on the facet and along the cavity in semiconductor diode lasers.
77:3762-3765.
1995
-
Hydrogen incorporation into Si-doped InP deposited by gas-source molecular beam epitaxy.
77:3378-3381.
1995
-
Strain measurement and estimation of photoelastic effects and strain-induced optical gain change in ridge waveguide lasers.
77:3382-3387.
1995
-
Magnetic and magnetocaloric properties of melt-spun GdxAg100−x alloys.
76:6301-6303.
1994
-
Neutron diffraction from the vortex lattice in the heavy fermion superconductor UPt3 (invited) (abstract).
76:6788-6788.
1994
-
Temperature effects on heavily doped polycrystalline silicon.
76:5253-5259.
1994
-
Forward elastic recoil measurements using heavy ions.
76:4524-4532.
1994
-
In situ growth of layered, spinel, and rock-salt LiCoO2 by laser ablation deposition.
76:2799-2806.
1994
-
Noise and photoconductive gain in AlGaAs/GaAs quantum well intersubband infrared photodetectors.
76:1889-1894.
1994
-
Temperature effects on the resistivity of polycrystalline silicon titanium salicide.
76:1071-1076.
1994
-
High-resistivity regions in n-type InGaAsP produced by ion bombardment at different temperatures.
76:199-206.
1994
-
Magnetoresistance and magnetization in submicron ferromagnetic gratings.
75:5249-5256.
1994
-
Microstructure of high-remanence Nd-Fe-B alloys with low-rare-earth content.
75:6652-6654.
1994
-
X-ray-absorption fine structure of selected R2Fe17 nitrides.
75:7018-7020.
1994
-
Die-upset Pr-Fe-B-type magnets from melt-spun ribbons.
75:4208-4213.
1994
-
Strain-induced electrically active stoichiometric defects in InAsyP1−y deposited onto (100) InP by gas-source molecular beam epitaxy.
75:4032-4039.
1994
-
Regular and periodic peaks in device current, capacitance, and intersubband photocurrent from a multiple-double-well.
75:1748-1753.
1994
-
Cesium coating of thin-film zinc sulphide cold cathodes.
74:6391-6396.
1993
-
Magnetic switching, relaxation, and domain structure of a Co/Si(111) film.
74:5658-5665.
1993
-
A magneto-optic technique for studying magnetization reversal processes and anisotropies applied to Co/Cu/Co trilayer structures.
73:6368-6370.
1993
-
Determination of the zirconium site in zirconium-substituted Nd2Fe14B.
73:6476-6478.
1993
-
Structure induced magnetic anisotropy behavior in Co/GaAs(001) films.
73:5948-5950.
1993
-
The microstructure of hot formed neodymium–iron–boron magnets with energy product 48 MG Oe.
73:6470-6472.
1993
-
Annealing studies of vacancies in proton irradiated silicon.
73:3740-3743.
1993
-
Nonlinear diffusion in Cu-Au multilayer thin films.
73:142-149.
1993
-
A new 1/f noise model for metal-oxide-semiconductor field-effect transistors in saturation and deep saturation.
72:5990-5998.
1992
-
Application of photothermal ionization spectroscopy to the study of epitaxially grown germanium on silicon.
72:3550-3553.
1992
-
Direct determination of praseodymium valence in Pr2(CoxFe1−x)14B.
72:676-679.
1992
-
Scattering, absorption, and anomalous spectral tuning of 1.3 μm semiconductor diode lasers.
71:4140-4144.
1992
-
Long wavelength infrared photocurrent study of Si-SiGe heterostructures.
71:2039-2041.
1992
-
Pulverizing anisotropic rapidly solidified Nd-Fe-B materials for bonded magnets.
70:6603-6605.
1991
-
Sm2Fe17Nx: Site and valence of the interstitial nitrogen (abstract).
70:6037-6037.
1991
-
Pockels’ effect in polycrystalline ZnS planar waveguides.
70:1180-1184.
1991
-
Observation of continuous D→X and B→X XeCl excimer fluorescence in a binary-gas microwave discharge.
70:1042-1044.
1991
-
Coercivity enhancement of melt-spun Nd-Fe-B ribbons using low-level Cu additions.
69:5823-5825.
1991
-
Evolution of the microstructure of rapidly solidified Nd-Fe-B permanent magnets.
69:6046-6048.
1991
-
Deformation-induced defects in GaAs.
69:4080-4091.
1991
-
Fabrication of textured Bi-Sr-Ca-Cu-O thick film by electrophoretic deposition.
69:1775-1777.
1991
-
Photochemical etching of n-InP as a function of temperature and illumination.
68:814-819.
1990
-
Effect of Mn concentration on the cathodo- and photoluminescence of ZnS:Mn.
67:1492-1496.
1990
-
Numerical model for degenerate and heterostructure semiconductor devices.
66:5078-5082.
1989
-
Heat-treatment-induced defects in low-resistivity silicon.
66:3526-3534.
1989
-
Scatter emission in a ceramic dielectric thin-film electroluminescent device.
66:2734-2736.
1989
-
The limits of resonant tunneling diode subharmonic mixer performance.
66:1454-1458.
1989
-
Planar channeling in GaAs/InxGa1−xAs/GaAs strained-layer structures.
65:1510-1515.
1989
-
Effects of stress on threshold, wavelength, and polarization of the output of InGaAsP semiconductor diode lasers.
64:6631-6638.
1988
-
Melt-spun Nd-Fe-B magnets and the Nd1+εFe4B4 phase.
64:5562-5564.
1988
-
Grain growth and alignment in hot deformed Nd-Fe-B magnets.
63:3528-3530.
1988
-
Organized and semiorganized doping for ZnS:Mn electroluminescent devices.
62:4244-4247.
1987
-
Microstructure of hot-pressed and die-upset NdFeB magnets.
62:967-971.
1987
-
Microstructure of hot-pressed and die-upset magnequench magnets (abstract).
61:3778-3778.
1987
-
Soliton spin configurations along the classical anisotropic Heisenberg chain.
61:4435-4437.
1987
-
Spin waves in the triangular antiferromagnet CsMnBr3.
61:3409-3411.
1987
-
Spin-wave polarization in single domain uranium selenide.
61:3412-3414.
1987
-
Effect of annealing on the microstructure of sintered Nd-Fe-B magnets.
59:2244-2246.
1986
-
Explanation of the influence on the oscillation spectrum of diode lasers for a change of facet reflectivity.
57:987-989.
1985
-
Technique for measurement of the gain spectra of semiconductor diode lasers.
56:3096-3099.
1984
-
Determination of optical properties of fibrous thermal insulation.
55:4064-4071.
1984
-
Paramagnetic spin waves in the one-dimensional antiferromagnet CsMnBr3.
55:1869-1870.
1984
-
Site occupation of ternary elements in Sm2(CoTM)17 compounds.
55:2058-2060.
1984
-
How well does 4He backscattering from low-Z nuclei obey the Rutherford formula?.
54:1800-1803.
1983
-
Superconductivity of the Nb3As system.
53:3719-3722.
1982
-
Microstructures of precipitation-hardened SmCo permanent magnets.
53:2389-2391.
1982
-
Carrier generation efficiency measurements on dispersions of photoconductive particles.
52:6197-6202.
1981
-
Transient photoresponse measurements in x-phase of metal-free phthalocyanine photovoltaic cells.
52:6190-6196.
1981
-
Comment on ’’I-V and C-V characteristics of Cr∥H-Pc∥Cr organic sandwich cell’’.
52:4871-4872.
1981
-
Electron microscopy study of the ferroelectric domains and domain wall structure in PbZr0.52Ti0.48O3.
52:2940-2943.
1981
-
Atomic hydrogen: A weakly interacting, magnetic Bose gas (invited).
52:2309-2314.
1981
-
Microstructure and properties of step aged rare earth alloy magnets.
52:2517-2519.
1981
-
Application of an extended linear cascade model to the sputtering of Ag, Au, and Pt by heavy atomic and molecular ions.
52:982-989.
1981
-
Segregation in Czochralski grown calcium gallium germanium garnet single crystals.
52:219-226.
1981
-
Space-charge generation properties of gold in MOS structures.
50:5865-5869.
1979
-
Abstract: The effects of V and V+Ti on the magnetic and mechanical properties of Fe-Cr-Co hard magnets.
50:2362-2362.
1979
-
Non-steady-state studies on MOS devices subject to a linear voltage ramp.
50:1439-1444.
1979
-
Effect of gold recombination centers on the states at the oxide/silicon interface.
49:6185-6186.
1978
-
Electron microscopy of some rare earth–cobalt alloy magnets.
49:2067-2069.
1978
-
Microstructure and microsegregation in substrate garnet materials.
49:1876-1878.
1978
-
A vibrational-bath model for the dynamics of SF6 absorption near 10.4 μm as a function of wavelength and absorbed energy.
48:4435-4443.
1977
-
Migration of ion-implanted krypton in silicon during anneal.
48:4540-4543.
1977
-
Surface energy of spinel.
48:4576-4580.
1977
-
Sputtering of niobium by energetic neutrons and protons: A round-robin experiment.
48:3914-3918.
1977
-
Saturation characteristics of SF6 absorption at the 10.53-μm CO2 P (14) line.
48:662-663.
1977
-
On the theory and analyses of the ac characteristics of defect thin films.
47:4223-4223.
1976
-
Theory and analyses of the ac characteristics of defect thin-film insulators.
47:114-119.
1976
-
Room-temperature operation and threshold temperature dependence of LPE-grown InxGa1−xAs homojunction lasers.
46:5280-5282.
1975
-
Reduction of the pumping efficiency in CO2 lasers at high discharge energy.
46:1322-1331.
1975
-
Detection of low−mass impurities in thin films using MeV heavy−ion elastic scattering and coincidence detection techniques.
46:52-61.
1975
-
Nitrogen−implanted silicon. I. Damage annealing and lattice location.
46:332-334.
1975
-
Nitrogen−implanted silicon. II. Electrical properties.
46:335-343.
1975
-
The Role of Internal Conversion Electrons in Gadolinium-Exposure Neutron Imaging.
43:3209-3212.
1972
-
Pulse Delays in TEA CO2 Lasers.
43:2387-2390.
1972
-
Optical Technique for the Measurement of Surface Charges of Electrets.
43:302-306.
1972
-
Stopping Cross Sections for 0.3- to 1.7-MeV Helium Ions in Silicon and Silicon Dioxide.
42:3969-3976.
1971
-
Magnetic and Electrical Characteristics of REPd3 Intermetallic Compounds.
42:1293-1294.
1971
-
Spin Wave and Critical Fluctuations in Magnetite.
41:1433-1434.
1970
-
Study of Spin Dynamics in Iron with Slow Neutrons.
40:1442-1442.
1969
-
Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique.
40:842-854.
1969
-
Exchange Interactions and the Spin-Wave Spectrum of Terbium.
39:887-888.
1968
-
Temperature Dependence of the Anisotropy Constants of Gd, Tb, and Dy.
39:1340-1340.
1968
-
Temporal Fluctuations of Moment in Paramagnets by Neutron Diffraction.
39:533-537.
1968
-
Location of Inert Gas Atoms in KCl, CaF2, and UO2 Crystals by H+ and He2+ ``Channeling'' Studies.
38:805-808.
1967
-
Calorimetric Study of a Diffusionless Phase Transition in TiNi.
37:2513-2514.
1966
-
Paramagnetic Scattering of Neutrons by an Iron-Nickel Alloy.
37:1352-1352.
1966
-
Spin Density Patterns around Impurity Atoms in Iron and Nickel.
37:1194-1194.
1966
-
Spin-Wave Dispersion in KMnF3.
37:1054-1055.
1966
-
Some Measurements of Exchange Energies by Paramagnetic Neutron Inelastic Scattering.
36:1092-1093.
1965
-
Polarity Effects in InSb Alloyed p-n Junctions.
36:176-180.
1965
-
Electrical Resistivity of Ferromagnets at Low Temperatures.
34:1370-1371.
1963
-
Magnetic Moment Distributions in Dilute Nickel Alloys.
34:1195-1199.
1963
-
Zeeman Effect of the R Lines in Cr2O3.
34:1232-1233.
1963
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Identity
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