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Investigation of cross-hatch in In0.3Ga0.7As...
Journal article

Investigation of cross-hatch in In0.3Ga0.7As pseudo-substrates

Abstract

Metamorphic buffer layers offer a wide variety of lattice constants for substrate on which devices can be grown. However, almost in all cases, the surface of the pseudo-substrate contains striations which are known as “cross-hatch.” Although, it is accepted that this surface undulation is related with the underlying gridlike misfit dislocations (MDs), the exact correlation is still to be determined. In this article, degree of polarization of …

Authors

Saha S; Cassidy DT; Thompson DA

Journal

Journal of Applied Physics, Vol. 113, No. 12,

Publisher

AIP Publishing

Publication Date

March 28, 2013

DOI

10.1063/1.4796104

ISSN

0021-8979