Strain-induced electrically active stoichiometric defects in InAs y P1− y deposited onto (100) InP by gas-source molecular beam epitaxy

InAsyP1−y epilayers were deposited by gas-source molecular beam epitaxy onto (100) InP, systematically varying the As fraction from 0.15 to 0.75, corresponding to a lattice mismatch of 0.5%–2.4%. Thin (≊190 Å), largely strained InAsyP1−y films exhibit a smooth, planar morphology and good photoluminescence characteristics even for strains exceeding 2%. In thicker films, depending on the growth parameters, capacitance-voltage depth profiling …