Structural and optical analysis of GaAsP/GaP core-shell nanowires Journal Articles

abstract

• The structural and optical properties of GaAsP/GaP core-shell nanowires grown by gas source molecular beam epitaxy were investigated by transmission electron microscopy, Raman spectroscopy, photoluminescence (PL), and magneto-PL. The effects of surface depletion and compositional variations in the ternary alloy manifested as a redshift in GaAsP PL upon surface passivation, and a decrease in redshift in PL in the presence of a magnetic field due to spatial confinement of carriers.

authors

• Mohseni, PK
• Rodrigues, AD
• Galzerani, JC
• Pusep, YA
• Lapierre, Ray Robert

status

• published 

publication date

• December 15, 2009

has subject area

• 01 Mathematical Sciences (FoR)
• 02 Physical Sciences (FoR)
• 09 Engineering (FoR)
• Applied Physics (Science Metrix)

published in

• Journal of Applied Physics  Journal

keywords

• GAAS NANOWIRES
• GAP
• GROWTH
• III-V semiconductors
• MOLECULAR-BEAM EPITAXY
• Physical Sciences
• Physics
• Physics, Applied
• Raman spectra
• Science & Technology
• gallium arsenide
• gallium compounds
• magneto-optical effects
• molecular beam epitaxial growth
• nanowires
• passivation
• photoluminescence
• red shift
• semiconductor quantum wires
• transmission electron microscopy

Digital Object Identifier (DOI)

• 10.1063/1.3269724

volume

• 106

issue

• 12