Journal article
Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer
Abstract
The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of …
Authors
Vajargah SH; Ghanad-Tavakoli S; Preston JS; Kleiman RN; Botton GA
Journal
Journal of Applied Physics, Vol. 114, No. 11,
Publisher
AIP Publishing
Publication Date
September 21, 2013
DOI
10.1063/1.4820255
ISSN
0021-8979