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Controlled group V intermixing in InGaAsP quantum...
Journal article

Controlled group V intermixing in InGaAsP quantum well structures and its application to the fabrication of two section tunable lasers

Abstract

We report the technique of controlled group V quantum well intermixing (QWI) in a compressively strained In0.76Ga0.24As0.85P0.15/In0.76Ga0.24As0.52P0.48 multiquantum well laser structure and its application to the fabrication of two-section tunable lasers. The blueshift of the band-gap energy was enhanced by capping the samples with films of SiO2 or low-temperature grown InP, while suppressed by a SixNy film with a refractive index of about …

Authors

Teng JH; Dong JR; Chua SJ; Lai MY; Foo BC; Thompson DA; Robinson BJ; Lee ASW; Hazell J; Sproule I

Journal

Journal of Applied Physics, Vol. 92, No. 8, pp. 4330–4335

Publisher

AIP Publishing

Publication Date

October 15, 2002

DOI

10.1063/1.1508428

ISSN

0021-8979