Positron annihilation investigation of porous silicon heat treated to 1000 °C

Positron lifetime and Doppler broadening spectroscopies were applied to investigate a porous silicon film subjected to heat treatment in an argon atmosphere. Heating between 300 and 500 °C increased the mass of the film by 17% due to oxygen uptake and the concentration of open volume defects associated with the formation of an oxide layer on the silicon nanocrystallites increased by a factor of 3. Between 600 and 1000 °C their concentration …