Journal article
Strain relaxation in (100) and (311) GaP∕GaAs thin films
Abstract
The nature of strain relaxation in GaP films grown on (100), (311)A, and (311)B GaAs by molecular beam epitaxy has been studied by transmission electron microscopy and atomic force microscopy. It is found that (100) GaP∕GaAs films develop surface undulations with twinning and cracking. (311)A GaAs provides good growth orientation for GaP films, producing flat surfaces and crack-free films. Similarly, (311)B GaP∕GaAs films do not develop cracks, …
Authors
Li Y; Niewczas M
Journal
Journal of Applied Physics, Vol. 101, No. 6,
Publisher
AIP Publishing
Publication Date
March 15, 2007
DOI
10.1063/1.2709615
ISSN
0021-8979