The influence of lateral composition modulation on the photoluminescence of tensile strained InGaAs quantum wells at room temperature

In some cases, it is important to consider the influence that lateral composition modulation has on room temperature photoluminescence spectra. It is shown that for tensile strained InGaAs quantum wells, there is enough composition fluctuation that occurs spontaneously during growth to have an observable effect on room temperature spectra. The photoluminescence at room temperature shows different characteristics depending on the in-plane polarization of the emission, and these differences can be traced back to transitions in the In-rich regions at low temperature.